MBT3946DW1T1G,
SMBT3946DW1T1G
Complementary General
Purpose Transistor
The MBT3946DW1T1G device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low-power surface mount applications
where board space is at a premium.
Features
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•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Table 1. MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
(NPN)
(PNP)
Collector
−
Base Voltage
(NPN)
(PNP)
Emitter
−Base
Voltage
(NPN)
(PNP)
Collector Current
−
Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
V
CEO
Value
40
−40
60
−40
6.0
−5.0
200
−200
Unit
Vdc
SOT−363/SC−88
CASE 419B
STYLE 1
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
(6)
MARKING DIAGRAM
V
CBO
Vdc
46 M
G
G
V
EBO
Vdc
I
C
mAdc
ESD
HBM Class 2
MM Class B
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MBT3946DW1T1G
Package
SC−88
(Pb-Free)
SC−88
(Pb-Free)
SC−88
(Pb-Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Table 2. THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
SMBT3946DW1T1G
MBT3946DW1T2G
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 7
1
Publication Order Number:
MBT3946DW1T1/D
MBT3946DW1T1G, SMBT3946DW1T1G
Table 3. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
(I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
(I
E
=
−10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
=
−0.1
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−50
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
SMALL- SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
=
−5.0
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(V
EB
=
−0.5
Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
f
T
300
250
−
−
−
−
1.0
2.0
0.5
0.1
100
100
−
−
4.0
4.5
8.0
10.0
10
12
8.0
10
400
400
MHz
(NPN)
h
FE
40
70
100
60
30
60
80
100
60
30
V
CE(sat)
−
−
−
−
V
BE(sat)
0.65
−
−0.65
−
−
−
300
−
−
−
−
300
−
−
0.2
0.3
−0.25
−0.4
0.85
0.95
−0.85
−0.95
Vdc
Vdc
−
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
V
(BR)CEO
40
−40
60
−40
6.0
−5.0
−
−
−
−
−
−
−
−
−
−
50
−50
50
−50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
Vdc
I
BL
nAdc
I
CEX
nAdc
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
C
obo
pF
C
ibo
pF
h
ie
kW
h
re
X 10
−
4
h
fe
−
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MBT3946DW1T1G, SMBT3946DW1T1G
Table 4. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (continued)
Characteristic
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 kW, f = 1.0 kHz)
(V
CE
=
−5.0
Vdc, I
C
=
−100
mAdc,
R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
=
−
0.5 Vdc)
(V
CC
=
−3.0
Vdc, V
BE
= 0.5 Vdc)
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(I
C
=
−10
mAdc, I
B1
=
−1.0
mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(V
CC
=
−3.0
Vdc, I
C
=
−10
mAdc)
(I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
=
−1.0
mAdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
35
35
35
35
200
225
50
75
(NPN)
(PNP)
(NPN)
(PNP)
Symbol
h
oe
Min
1.0
3.0
−
−
Max
40
60
5.0
4.0
Unit
mmhos
NF
dB
ns
ns
2. Pulse Test: Pulse Width
≤
300
ms;
Duty Cycle
≤
2.0%.
(NPN)
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
0
- 0.5 V
< 1 ns
C
s
< 4 pF*
- 9.1 V′
* Total shunt capacitance of test jig and connectors
< 1 ns
1N916
C
s
< 4 pF*
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
5.0
C
ibo
3.0
2.0
C
obo
(NPN)
5000
3000
2000
Q, CHARGE (pC)
1000
700
500
300
200
100
70
50
Q
T
Q
A
V
CC
= 40 V
I
C
/I
B
= 10
(NPN)
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
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3
Figure 4. Charge Data
MBT3946DW1T1G, SMBT3946DW1T1G
(NPN)
500
300
200
100
70
50
30
20
10
7
5
(NPN)
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
40 V
15 V
10
2.0 V
50 70 100
200
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
Figure 6. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
(NPN)
10
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
(NPN)
10
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
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4
Figure 10. Noise Figure
MBT3946DW1T1G, SMBT3946DW1T1G
(NPN)
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
(NPN)
h fe , CURRENT GAIN
200
hoe, OUTPUT ADMITTANCE (
m
mhos)
100
50
(NPN)
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 11. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
(NPN)
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
10
7.0
5.0
3.0
2.0
Figure 12. Output Admittance
(NPN)
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
1000
I
C
, COLLECTOR CURRENT (mA)
1
ms
100 ms
10 ms 1 ms
100
1s
10
(NPN)
1
1
Single Pulse Test at T
A
= 25°C
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
100
Figure 15. Safe Operating Area
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