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UPC2726T-E3

Description
RF Amplifier Wideband RFIC Amp
CategoryWireless rf/communication    Radio frequency and microwave   
File Size42KB,4 Pages
ManufacturerNEC Electronics
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UPC2726T-E3 Overview

RF Amplifier Wideband RFIC Amp

UPC2726T-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Gain11 dB
Maximum input power (CW)
JESD-609 codee0
Maximum operating frequency1600 MHz
Minimum operating frequency400 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceTin/Lead (Sn/Pb)
1.6 GHz DIFFERENTIAL
WIDEBAND SILICON
RFIC AMPLIFIER
FEATURES
• HIGH GAIN:
15 dB Typical at 400 MHz
• WIDEBAND FREQUENCY RESPONSE:
1.6 GHz TYP
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
Power Gain, G
P
(dB)
20
G
P
UPC2726T
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
V
CC
= 5.0 V
3.0 V
2.0 V
0
9
7
NF
V
CC
= 2.0 V
5
V
CC
= 4.5--5.5 V
3
1
0.1
0.3
1.0
2.0
3.0
DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is
manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This amplifier was designed as a buffer amplifier for circuits
requiring differential inputs and outputs for increased common-
mode rejection.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
Frequency, f (GHz)
GAIN vs. FREQUENCY
AND TEMPERATURE
20
-40°C
Power Gain, G
P
(dB)
15
25°C
10
85°C
V
CC
= 5.0 V
5
0.1
0.3
1.0
2.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Z
L
= Z
S
= 50
Ω,
f = 400 MHz)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
NF
fu
P
SAT
RL
IN
RL
OUT
ISOL
OIP
3
PARAMETERS AND CONDITIONS
Circuit Current, (No Signal)
Small Signal Gain
Noise Figure
Upper limit Operating Frequency
1
Saturated Output Power
Input Return Loss
Output Return Loss
Isolation
Output 3rd Order Intercept Point
2
UNITS
mA
dB
dB
GHz
dBm
dB
dB
dB
dBm
1.0
-5
MIN
8
11
V
CC
= 5 V
TYP
11.5
15
4.5
1.6
-2
2
4
60
-2.5
UPC2726T
V
CC
= 2 V
TYP
2.5
4.5
5.1
2.4
-14
1
4
58
-10
MAX
15
17
6
MIN
MAX
Notes:
1. The Gain at fu is 3 dB down from the gain at 400 MHz.
2. f
1
= 400 MHz, f
2
= 402 MHz, single side band.
California Eastern Laboratories
Noise Figure, NF (dB)
• SINGLE POSITIVE DC SUPPLY
10
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