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IRL510STRL

Description
MOSFET N-Chan 100V 5.6 Amp
CategoryDiscrete semiconductor    The transistor   
File Size278KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRL510STRL Overview

MOSFET N-Chan 100V 5.6 Amp

IRL510STRL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance0.54 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRL510S, SiHL510S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
6.1
2.6
3.3
Single
D
100
0.54
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
FEATURES
D
2
PAK
(TO-263)
DESCRIPTION
G
G D
S
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHL510S-GE3
IRL510SPbF
SiHL510S-E3
D
2
PAK (TO-263)
SiHL510STRL-GE3
a
IRL510STRLPbF
a
SiHL510STL-E3
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
100
± 10
5.6
4.0
18
0.29
0.025
100
5.6
4.3
43
3.7
5.5
- 55 to + 175
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
I
AR
Avalanche Current
E
AR
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 4.8 mH, R
g
= 25
,
I
AS
= 5.6 A (see fig. 12).
c. I
SD
5.6 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90380
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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