PROFET® BTS 6163 D
Smart Highside Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
•
Short circuit protection with latch
•
Current limitation
•
Overload protection
•
Thermal shutdown with restart
•
Overvoltage protection (including load dump)
•
Loss of ground protection
•
Loss of
V
bb
protection (with external diode for
charged inductive loads)
•
Very low standby current
•
Fast demagnetization of inductive loads
•
Electrostatic discharge
(ESD) protection
•
Optimized static
electromagnetic compatibility
(EMC)
•
Green Product (RoHS compliant)
•
AEC qualified
Features
Product Summary
Operating voltage
On-state resistance
Nominal current
Load current (ISO)
Current limitation
Package
V
bb(on)
R
ON
I
L(nom)
I
L(ISO)
I
L12(SC)
5.5 ... 62
V
20
mΩ
5.5
A
17
A
70
A
PG-TO252-5-11
(DPAK 5 pin; less than half the size as TO 220 SMD)
Diagnostic Function
•
Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)
Application
•
Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
3 & Tab
R
+ V bb
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
bb
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
1, 5
I
L
Current
Sense
Load
2
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
4
R
IS
Data Sheet
1 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Pin
1
2
Tab/(3)
4
Symbol
OUT
IN
Vbb
IS
O
I
+
S
Function
Output;
output to the load; pin 1 and 5 must be externally shorted* .
Input;
activates the power switch if shorted to ground.
Supply Voltage;
positive power supply voltage; tab and pin3 are internally
shorted.
Sense Output;
Diagnostic feedback; provides at normal operation a sense
current proportional to the load current; in case of overload,
overtemperature and/or short circuit a defined current is provided (see
Truth Table on page 8)
Output;
output to the load; pin 1 and 5 must be externally shorted* .
5
OUT
O
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
1)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 24 V
R
I
= 2
Ω,
R
L
= 4.4
Ω,
t
d
= 400 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
3)
single pulse
I
L
= 20 A,
V
bb
= 24V
T
j
=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
acc.
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 9
Symbol
V
bb
V
bb
V
Load dump 2
)
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
Values
62
48
70
self-limited
-40 ...+150
-55 ...+150
59
0.25
3.0
+15, -120
+15, -120
Unit
V
V
V
A
°C
W
J
kV
mA
Input voltage slew rate
V
bb
≤
16V : dV
bIN
/ dt
V
bb
> 16V
4)
:
self-limited
20
V/µs
1)
2)
3)
4)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on
page11.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
See also diagram on page 11.
See also on page 8. Slew rate limitation can be achieved by means of using a series resistor
R
IN
in the input
path. This resistor is also required for reverse operation. See also page 10.
2 of 18
Rev. 1.0, 2007-07-23
Data Sheet
PROFET® BTS 6163 D
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case
:
R
thJC
junction - ambient (free air):
R
thJA
SMD version, device on PCB
6)
:
Values
Unit
typ
max
--
1.1 K/W
80
--
45
55
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
V
IN
= 0,
V
bb
= 5.5V,
I
L
= 7.5 A
V
IN
= 0,
V
bb
= 12..24V,
I
L
= 7.5 A
T
j
=25 °C:
R
ON
T
j
=150 °C:
--
--
--
--
--
19
38
16
32
40
25
50
20
40
65
mΩ
T
j
=25 °C:
T
j
=150 °C:
Output voltage drop limitation at small load
currents (Tab to pin 1,5)
5
)
T
j
=-40...150 °C:
Nominal load current (Tab to pin 1,5)
ISO Proposal:
V
ON
≤
0.5 V,
T
C
= 85°C,
T
j
≤
150°C
SMD
6
),
V
ON
≤
0.5 V,
T
A
= 85°C,
T
j
≤
150°C
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
= 3.9
Ω,
T
j
=-40...150 °C
Slew rate on
25 to 50%
V
OUT
,
R
L
= 3.9
Ω,
T
j
=-40...150 °C
Slew rate off
50 to 25%
V
OUT
,
R
L
= 3.9
Ω,
T
j
=-40...150 °C
V
ON(NL)
mV
I
L(ISO)
I
L(nom)
t
on
t
off
dV /dt
on
-dV/dt
off
17
5.5
--
--
--
--
21.5
6.5
150
200
0.65
0.65
--
--
300
550
A
µs
1.0 V/µs
1.2 V/µs
5
)
6
)
See figure 7a on page 15.
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
3 of 18
Rev. 1.0, 2007-07-23
Data Sheet
PROFET® BTS 6163 D
Parameter and Conditions
at
T
j
= 25,
V
bb
= 24 V unless otherwise specified
Symbol
min.
Values
typ.
max.
Unit
Operating Parameters
Operating voltage (V
IN
=0)
T
j
=-40...150 °C:
V
bb(on)
Undervoltage shutdown
7
)
8
)
V
bIN(u)
Undervoltage restart of charge pump
V
bb(ucp)
Overvoltage protection
9
)
I
bb
=15 mA
Standby current
I
IN
=0
Reverse Battery
Reverse battery voltage
10)
On-state resistance (pin 1,5 to pin 3)
V
bb
= - 8V,
V
IN
= 0,
I
L
= -7.5 A,
R
IS
= 1 kΩ,
8)
T
j
=25 °C:
R
ON(rev)
T
j
=150 °C:
V
bb
= -12..-24V,
V
IN
= 0,
I
L
= -7.5 A,
R
IS
= 1 kΩ,
T
j
=25 °C:
T
j
=150 °C:
Integrated resistor in
V
bb
line
R
bb
-V
bb
V
Z,IN
T
j
=-40...+120°C
:
I
bb(off)
T
j
=150°C:
5.5
--
--
68
--
--
--
2.5
4
73
3
6
62
3.5
5.5
--
6
14
V
V
V
V
µA
--
--
16
V
--
--
--
--
--
19
35
18
33
100
25
44
23
40
150
mΩ
Ω
Inverse Operation
11)
Output voltage drop (pin 1,5 to pin 3)
8)
I
L
= -7.5 A,
R
IS
= 1 kΩ,
T
j
=25 °C:
-V
ON(inv)
I
L
= -7.5 A,
R
IS
= 1 kΩ,
T
j
=150 °C:
Turn-on delay after inverse operation;
I
L
> 0A
8)
V
IN
(inv) =
V
IN
(fwd) = 0 V
t
d(inv)
--
--
--
700
300
1
--
--
--
mV
ms
7)
V
bIN
=V
bb
-V
IN
see diagram page 14.
8)
Not subject to production test, specified by design.
9)
See also
V
ON(CL)
in circuit diagram page 9.
10)
For operation at voltages higher then |16V| please see required schematic on page 10.
11)
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS.
In this case the device switches on with a time delay t
d(inv)
)
after the transition from inverse to forward mode.
Data Sheet
4 of 18
Rev. 1.0, 2007-07-23
PROFET® BTS 6163 D
Parameter and Conditions
at
T
j
= 25,
V
bb
= 24 V unless otherwise specified
Symbol
min.
Values
typ.
max.
Unit
Protection Functions
12
)
Short circuit current limit (Tab to pin 1,5)
13
)
Short circuit current limit at
V
ON
= 6V14)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 12V
14
)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 18V
14)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 24V
T
j
=-40°C:
t
m
=170µs
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 30V
T
j
=-40°C:
t
m
=170µs
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 45V
14)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
I
L6(SC)
I
L12(SC)
I
L18(SC)
I
L24(SC)
I
L30(SC)
I
L45(SC)
--
--
50
--
--
40
--
--
30
--
--
25
--
--
20
--
--
15
2.5
350
90
80
65
80
70
55
55
50
48
45
40
35
30
30
30
22
22
22
3.5
650
110
--
--
100
--
--
80
--
--
60
--
--
50
--
--
35
--
--
4.5
1200
A
A
A
A
A
A
V
ON(SC)
t
d(SC1)
V
µs
µs
V
°C
K
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC),
T
j
= -40...+150°C
min. value valid only if input "off-signal" time exceeds 30
µs
Short circuit shutdown delay during on condition
13)
V
ON
>
V
ON(SC)
Output clamp (inductive load switch off)
15
)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Thermal overload trip temperature
Thermal hysteresis
t
d(SC2)
V
ON(CL)
T
jt
∆
T
jt
--
63
150
--
2
67
175
10
--
--
--
--
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
13
) Short circuit current limit for max. duration of t
d(SC1)
, prior to shutdown, see also figures 3.x on page 13.
14
) Not subject to production test, specified by design.
15
) See also figure 2b on page 12.
12)
Data Sheet
5 of 18
Rev. 1.0, 2007-07-23
Talking
京公网安备 11010802033920号
EEWORLD
