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KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
April 2015
KSH44H11 / KSH44H11I
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
•
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector-Emitter Saturation Voltage
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
Applications
• Switching Regulators
• Converters
• Power Amplifiers
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
Ordering Information
Part Number
KSH44H11TF
KSH44H11TM
KSH44H11ITU
Top Mark
KSH44H11
KSH44H11
KSH44H11-I
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Packing Method
Tape and Reel
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Parameter
Value
80
5
8
16
20.00
1.75
150
- 65 to +150
Unit
V
V
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Collector Dissipation (T
A
= 25°C)
Junction Temperature
Storage Temperature
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
1
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Conditions
V
CE
= 80 V, I
B
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 2 A
V
CE
= 1 V, I
C
= 4 A
I
C
= 8 A, I
B
= 0.4 A
I
C
= 8 A, I
B
= 0.8 A
V
CE
= 10 V, I
C
= 0.5 A
V
CB
= 10 V, f = 1 MHz
I
C
= 5 A,
I
B1
= - I
B2
= 0.5 A
Min.
80
Typ.
Max.
10
50
Unit
V
μA
μA
Collector-Emitter Sustaining Voltage
(1)
I
C
= 30 mA, I
B
= 0
60
40
1
1.5
50
130
300
500
140
V
V
MHz
pF
ns
ns
ns
Note:
1. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
2%.
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
2
KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
1000
100
V
CE
= 1V
I
C
[A], COLLECTOR CURRENT
I
CP
(max)
10
h
FE
, DC CURRENT GAIN
100
I
C
(max)
1
1m
s
5m
DC
s
10
0
μ
s
50
0
μ
s
10
0.1
1
0.01
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
25
P
C
[W], POWER DISSIPATION
20
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 3. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
3
Microcontroller MCU
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