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RD2006LS-SB5

Description
Diodes - General Purpose, Power, Switching SWITCHING DEVICE
CategoryDiscrete semiconductor    diode   
File Size228KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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RD2006LS-SB5 Overview

Diodes - General Purpose, Power, Switching SWITCHING DEVICE

RD2006LS-SB5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current180 A
Number of components1
Phase1
Number of terminals2
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number : ENA1613
RD2006LS-SB5
SANYO Semiconductors
DATA SHEET
RD2006LS-SB5
Features
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=600V).
High reliability.
Easy to be mounted, good heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
Conditions
Ratings
600
20
Sine wave, 10ms single pulse
180
150
-
-55 to +150
Unit
V
A
A
°C
°C
I
O
I
FSM
Tj
Tstg
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr1
trr2
Rth(j-c)
IR=1mA
IF=20A
VR=600V
IF=10A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction-Case : Smoothed DC
Conditions
Ratings
min
600
1.6
44
22
3.5
1.75
100
50
typ
max
Unit
V
V
μA
ns
ns
°C / W
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
N1809SA TK IM TC-00002183 No. A1613-1/3

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