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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers. The most current and up-to-date ordering information can be found at
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Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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FGB20N60SF — 600 V, 20 A Field Stop IGBT
March 2015
FGB20N60SF
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
=2.2 V @ I
C
= 20 A
• High Input Impedance
• Fast Switching : E
OFF
= 8 uJ/A
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
Applications
• Solar Inverter, UPS, Welder, PFC
C
COLLECTOR
(FLANGE)
G
C
E
G
D
2
-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100 C
o
Ratings
600
±20
±30
40
20
60
208
83
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
o
C
o
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
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