DGS 4-025A
DGSK 8-025A
DGS 3-025AS
Gallium Arsenide Schottky Rectifier
I
FAV
= 5.4 A
V
RRM
= 250 V
C
Junction
= 6.4 pF
Type
Marking on product
Circuit
Package
A = Anode, C = Cathode , TAB = Cathode
A
C
DGS 3-025AS
3A250AS
Single
A
C
TO-252 AA
A
A
C (TAB)
DGS 4-025A
DGS 4-025A
Single
TO-220 AC
C
A
C (TAB)
DGSK 8-025A
DGSK 8-025A
Common cathode
A
C
A
TO-220 AB
A
C
A
C (TAB)
Symbol
V
RRM/RSM
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Conditions
Maximum Ratings
250
V
A
A
A
°C
°C
W
Nm
Features
• Low forward voltage
• Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
• Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
5.4
3.9
10
-55...+175
-55...+150
T
C
= 25°C
mounting torque (TO-220)
18
0.4...0.6
Applications
• MHz switched mode power supplies
(SMPs)
• Small size SMPs
• High frequency converters
• Resonant converters
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Pulse test:
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 2 A;
I
F
= 2 A;
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
0.7
0.7
1.3
1.3
6.4
8.5
1.6
mA
mA
V
V
pF
K/W
K/W
g
g
V
R
= 100 V; T
VJ
= 125°C
TO-220
TO-252
TO-220
Pulse Width = 5 ms, Duty Cycle < 2.0 %
0.5
0.3
2
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-2
435
DGS 4-025A
DGSK 8-025A
10
100
pF
A
1
DGS 3-025AS
Outline TO-220
I
F
C
J
T
VJ
= 125°C
0,1
T
VJ
=
125°C
25°C
10
0,01
0,001
0,0
0,5
1,0
1,5
V
F
V 2,0
1
0,1
1
10
100 V 1000
V
R
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
Z
thJC
Single Pulse
0,1
Outlines
TO-252
0,01
DGS3-025AS
0,00001
0,0001
0,001
0,01
0,1
1
t
s
10
Fig. 3 typ. thermal impedance junction to case
1 Anode
2 NC
3 Anode
4 Cathode
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
GaAs Schottky Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
2-2
435
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min.
Max.
0.086
0.094
0.035
0.045
0
0.005
0.025
0.035
0.030
0.045
0.205
0.215
0.018
0.023
0.018
0.023
0.235
0.245
0.170
0.205
0.250
0.265
0.170
0.205
0.090 BSC
0.180 BSC
0.370
0.410
0.020
0.040
0.025
0.040
0.035
0.050
0.100
0.115
Embedded System
京公网安备 11010802033920号
EEWORLD
