DG213
Vishay Siliconix
Quad Complementary CMOS Analog Switch
FEATURES
D
D
D
D
D
D
D
"22-V
Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—r
DS(on)
: 45
W
Low Leakage—I
D(on)
: 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—t
ON
: 85 ns
BENEFITS
D
D
D
D
D
D
D
Low Charge Injection—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Low Cost
APPLICATIONS
D
D
D
D
D
D
Industrial Instrumentation
Test Equipment
Communications Systems
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
DESCRIPTION
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Vishay Siliconix’ proprietary
high-voltage silicon gate CMOS process, resulting in lower
on-resistance, lower leakage, higher speed, and lower power
consumption.
injection compensation design minimizes switching
transients. These switches can handle up to
"22
V, and have
an improved continuous current rating of 30 mA. An epitaxial
layer prevents latchup.
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
This analog switch was designed for a wide variety of general
purpose applications in telecommunications, instrumentation,
process control, computer peripherals, etc. An improved charge
For additional information, please refer to Application Note
AN208 (FaxBack document #70606).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
Logic
0
1
SW
1
, SW
4
OFF
ON
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
SW
2
, SW
3
ON
OFF
ORDERING INFORMATION
Temp Range
Package
16-Pin Plastic DIP
–40 to 85_C
40
16-Pin Narrow SOIC
16-Pin TSSOP
Part Number
DG213DJ
DG213DY
DG213DQ
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DG213
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin TSSOP
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
r
DS(on)
Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
S
=
"14
V, V
D
=
#14
V
V
D
=
"14
V, V
S
=
#14
V
V
S
= V
D
= 14 V
V
D
=
"10
V, I
S
= 1 mA
,
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
–0.5
–5
–0.5
–5
–0.5
–10
V–
45
1
"0.01
"0.01
"0.02
V+
60
V
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
85
2
0.5
5
0.5
5
0.5
10
W
nA
A
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
V
INH
V
INL
I
INH
or I
INL
C
IN
V
INH
or V
INL
Full
Full
Full
Room
–1
5
2.4
V
0.8
1
mA
pF
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
t
ON
t
OFF
t
D
Q
C
S(off)
C
D(off)
C
D(on)
OIRR
X
TALK
V
S
= 10 V
See Figure 2
S Fi
V
S
= 10 V, See Figure 3
C
L
= 1000 pF, V
g
= 0 V, R
g
= 0
W
V
S
= 0 V, f = 1 MHz
V
D
= V
S
= 0 V, f = 1 MHz
C
L
= 15 p , R
L
= 50
W
pF,
V
S
= 1 V
RMS
, f = 100 kH
kHz
Room
Room
Room
Room
Room
Room
Room
Room
Room
15
85
55
25
1
5
5
16
90
dB
95
F
pF
pC
130
100
ns
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Document Number: 70662
S-00787—Rev. F, 17-Apr-00
DG213
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
I+
V
IN
= 0 or 5 V
I–
I
L
V
OP
Room
Full
Room
Full
Room
Full
Full
"3
–1
–5
1
5
"22
V
1
5
mA
A
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
SPECIFICATIONS FOR UNIPOLAR SUPPLY
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
V
ANALOG
r
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Full
Room
Full
V–
90
V+
110
140
V
W
D Suffix
–40 to 85_C
Symbol
V+ = 12 V, V– = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
c
Typ
b
Max
c
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
t
ON
See Figure 2
t
OFF
t
D
Q
V
S
= 8 V, See Figure 3
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
W
Room
Room
Room
50
45
80
4
pC
100
ns
Room
125
200
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
I+
V
IN
= 0 or 5 V
I–
I
L
V
OP
Room
Full
Room
Full
Room
Full
Full
)3
–1
–5
1
5
)40
V
1
5
mA
A
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. V
IN
= input voltage to perform proper function.
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
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DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply Voltages
110
r DS(on) Drain-Source On-Resistance (
W
)
–
100
90
80
70
60
50
40
30
20
10
–20 –16 –12
–8
–4
0
4
8
12
16
20
V
D
– Drain Voltage (V)
"20
V
"10
V
"15
V
"5
V
r DS(on) Drain-Source On-Resistance (
W
)
–
100
90
80
70
60
50
40
30
20
10
0
–15
125_C
85_C
25_C
–55_C
V+ = 15 V
V– = –15 V
r
DS(on)
vs. V
D
and Temperature
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
r
DS(on)
vs. V
D
and Single Power Supply Voltages
300
r DS(on) Drain-Source On-Resistance (
W
)
–
5V
250
V– = 0 V
V
L
= 5 V
40
30
20
200
I S,I D – Current (pA)
10
0
–10
–20
50
–30
0
0
2
4
6
8
10
12
–40
–20
Leakage Currents vs. Analog Voltage
V+ = 22 V
V– = –22 V
T
A
= 25_C
I
D(on)
150
7V
10 V
12 V
I
S(off)
, I
D(off)
100
–15
–10
–5
0
5
10
15
20
V
D
– Drain Voltage (V)
V
ANALOG
– Analog Voltage (V)
Leakage Current vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
V
S,
V
D
=
"14
V
30
Q
S,
Q
D
– Charge Injection vs. Analog Voltage
20
I S,I D – Current
Q – Charge (pC)
100 pA
10
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–10
0
I
S(off)
, I
D(off)
10 pA
–20
1 pA
–55
–35
–15
5
25
45
65
85
105 125
–30
–15
–10
–5
0
5
10
15
Temperature (_C)
V
ANALOG
– Analog Voltage (V)
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Document Number: 70662
S-00787—Rev. F, 17-Apr-00
DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Off Isolation vs. Frequency
120
110
100
90
OIRR (dB)
R
L
= 50
W
80
70
60
50
40
10 k
100 k
1M
10 M
V+ = +15 V
V– = –15 V
f – Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
X
V
L
Level
Shift/
Drive
IN
X
V–
V+
D
X
GND
V–
FIGURE 1.
TEST CIRCUITS
+15 V
V+
V
S
= +2 V
S
IN
3V
GND
V–
R
L
300
W
C
L
35 pF
D
V
O
Logic
Input
3V
50%
0V
t
OFF
90%
t
r
<20 ns
t
f
<20 ns
Switch
Output
–15 V
V
O
= V
S
R
L
R
L
+ r
DS(on)
V
O
t
ON
FIGURE 2.
Switching Time
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
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