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PSMN012-100YS,115

Description
MOSFET N-CHANNEL 100V STD LEVEL MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size812KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PSMN012-100YS,115 Overview

MOSFET N-CHANNEL 100V STD LEVEL MOSFET

PSMN012-100YS,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOIC
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
PSMN012-100YS
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Rev. 04 — 23 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
T
j
Quick reference
Conditions
T
mb
= 25 °C; see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
-55
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 60 A; V
sup
100 V;
R
GS
= 50
Ω;
unclamped
V
GS
= 10 V; I
D
= 45 A;
V
DS
= 50 V; see
Figure 14
and
15
-
Typ
-
-
-
-
-
Max
100
60
130
175
170
Unit
V
A
W
°C
mJ
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
junction temperature
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
-
-
19
64
-
-
nC
nC
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