MCP6231
20 µA, 300 kHz Rail-to-Rail Op Amp
Features
•
•
•
•
•
•
Gain Bandwidth Product: 300 kHz (typ.)
Supply Current: I
Q
= 20 µA (typ.)
Supply Voltage: 1.8V to 5.5V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in 5-Pin SC-70 and SOT-23 packages
Description
The Microchip Technology Inc. MCP6231 operational
amplifier (op amp) provides wide bandwidth for the
quiescent current. The MCP6231 has a 300 kHz Gain
Bandwidth Product (GBWP) and 65° (typ.) phase
margin. This op amp operates from a single supply
voltage as low as 1.8V, while drawing 20 µA (typ.)
quiescent current. In addition, the MCP6231 supports
rail-to-rail input and output swing, with a common mode
input voltage range of V
DD
+ 300 mV to V
SS
- 300 mV.
This op amp is designed in one of Microchip’s
advanced CMOS processes.
The MCP6231 operates in the Extended temperature
range of -40°C to +125°C. It has a power supply range
of 1.8V to 5.5V.
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Transimpedance amplifiers
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6231
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
–
+
Available Tools
Spice Macro Models (at www.microchip.com)
FilterLab
®
Software (at www.microchip.com)
MCP6231R
SOT-23-5
5 V
DD
V
OUT
1
V
DD
2
4 V
IN
–
V
IN
+ 3
–
+
5 V
SS
Typical Application
R
g2
V
IN2
R
g1
V
IN1
V
DD
R
x
R
y
R
z
–
MCP6231
+
V
OUT
R
f
4 V
IN
–
MCP6231
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
–
+
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6231U
SC-70-5, SOT-23-5
V
IN
+ 1
V
SS
2
V
IN
– 3
+
–
5 V
DD
4 V
OUT
Summing Amplifier Circuit
2004 Microchip Technology Inc.
DS21881A-page 1
MCP6231
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Function
Absolute Maximum Ratings †
V
DD
- V
SS
.........................................................................7.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection On All Pins (HBM;MM)
............... ≥
4 kV; 400V
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
V
IN
+
V
IN
–
V
DD
V
SS
V
OUT
Non-inverting Input
Inverting Input
Positive Power Supply
Negative Power Supply
Output
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, R
L
= 100 kΩ
to V
DD
/2 and V
OUT
≈
V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Extended Temperature
Input Offset Drift with Temperature
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current:
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note:
Sym
V
OS
V
OS
∆V
OS
/∆T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
A
OL
Min
–5.0
–7.0
—
—
—
—
—
—
—
—
V
SS
– 0.3
61
90
Typ
—
—
±3.0
83
±1.0
20
1100
±1.0
10 ||6
10 ||3
—
75
110
13
13
Max
+5.0
+7.0
—
—
—
—
—
—
—
—
V
DD
+ 0.3
—
—
Units
mV
mV
µV/°C
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
Conditions
V
CM
= V
SS
T
A
= –40°C to +125°C
(Note)
T
A
= –40°C to +125°C,
V
CM
= V
SS
V
CM
= V
SS
T
A
= +85°C
T
A
= +125°C
V
CM
= –0.3V to 5.3V, V
DD
= 5V
V
OUT
= 0.3V to V
DD
- 0.3V,
V
CM
= V
SS
R
L
= 10 kΩ
V
DD
= 1.8V
V
DD
= 5.5V
V
OL
, V
OH
I
SC
I
SC
V
DD
I
Q
V
SS
+ 35
—
—
1.8
10
—
±6
±23
—
20
V
DD
– 35
—
—
5.5
30
mV
mA
mA
V
µA
I
O
= 0, V
CM
= V
DD
– 0.5V
The SC70 package is only tested at 25°C.
DS21881A-page 2
2004 Microchip Technology Inc.
MCP6231
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
6.0
52
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
300
65
0.10
—
—
—
kHz
°
V/µs
G = +1
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
331
256
85
163
206
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
–40
–40
–65
—
—
—
+125
+125
+150
°C
°C
°C
Note
Sym
Min
Typ
Max
Units
Conditions
The internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
2004 Microchip Technology Inc.
DS21881A-page 3
MCP6231
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
20%
Percentage of Occurrences
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
-5
-4
-3
-2
-1
0
1
2
3
4
Input Offset Voltage (mV)
5
630 Samples
V
CM
= V
SS
CMRR, PSRR (dB)
90
V
DD
= 5.0V
85
PSRR (V
CM
= V
SS
)
80
75
CMRR (V
CM
= -0.3 V to +5.3 V)
70
-40
-20
0
20
40
60
80
Ambient Temperature (°C)
100
120
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Temperature.
120
Open-Loop Gain (dB)
100
80
60
40
20
0
-20
1.E-01
1.E+00
1.E+01
CMRR, PSRR vs. Ambient
100
90
PSRR, CMRR (dB)
80
70
60
50
40
30
20
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
PSRR-
V
DD
= 5.0V
-60
Phase
CMRR
PSRR+
-90
-120
-150
-180
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
10
100
1k
Frequency (Hz)
10k
100k
0.1
1
10 100 1k 10k 100k 1M 10M
Frequency (Hz)
-210
FIGURE 2-2:
Frequency.
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
0
6
PSRR, CMRR vs.
FIGURE 2-5:
Frequency.
30%
Open-Loop Gain, Phase vs.
Percentage of Occurrences
Percentage of Occurrences
630 Samples
V
CM
= V
SS
T
A
= +85°C
25%
20%
15%
10%
5%
0%
632 Samples
V
CM
= V
SS
T
A
= +125°C
12
18
24
30
36
42
0.0
0.2
0.3
0.5
0.6
0.8
0.9
1.1
1.2
1.4
1.5
1.7
1.8
Input Bias Current (pA)
Input Bias Current (nA)
FIGURE 2-3:
Input Bias Current at +85°C.
FIGURE 2-6:
Input Bias Current at +125°C.
DS21881A-page 4
2004 Microchip Technology Inc.
2.0
Open-Loop Phase (°)
Gain
R
L
= 100.0 kΩ
V
DD
= 5.0V
V
CM
= V
DD
/2
0
-30
MCP6231
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
1,000
Input Noise Voltage Density
(nV/
√
Hz)
Percentage of Occurrences
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
20%
18%
14%
12%
10%
8%
6%
4%
2%
0%
628 Samples
V
CM
= V
SS
16%
T
A
= -40°C to +125°C
100
10
-12
-10
10
Frequency (Hz)
Input Offset Voltage Drift (µV/°C)
FIGURE 2-7:
vs. Frequency.
550
Input Noise Voltage Density
FIGURE 2-10:
Input Offset Voltage Drift.
100
Input Offset Voltage (µV)
Input Offset Voltage (µV)
450
350
250
V
DD
= 1.8 V
150
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
50
0
-50
-100
-150
-200
-250
-300
V
DD
= 1.8 V
V
CM
= V
SS
V
DD
= 5.5 V
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Common Mode Input Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
300
FIGURE 2-11:
Output Voltage.
30
20
Input Offset Voltage vs.
Input Offset Voltage (µV)
200
100
0
-100
-200
-300
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
Output Short Circuit Current
(mA)
+I
SC
, V
DD
= 5.5 V
10
0
-10
-20
-30
+I
SC
, V
DD
= 1.8 V
-I
SC
, V
DD
= 1.8 V
-I
SC
, V
DD
= 5.5 V
V
DD
= 5.5 V
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
0
25
50
75
100
125
Common Mode Input Voltage (V)
Ambient Temperature (°C)
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
2004 Microchip Technology Inc.
DS21881A-page 5
12
-8
-6
-4
-2
0.1
1
10
100
1k
10k
100k
0
2
4
6
8
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