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BLC8G20LS-310AVY

Description
RF MOSFET Transistors ACP Pad for base station
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF MOSFET Transistors ACP Pad for base station

BLC8G20LS-310AVY Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingReel
Factory Pack Quantity100
BLC8G20LS-310AV
Power LDMOS transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1900 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in an asymmetrical Doherty production test circuit.
V
DS
= 28 V; I
Dq
= 650 mA (main); V
GS(amp)peak
= 0.5 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
1930 to 1995
V
DS
(V)
28
P
L(AV)
(dBm)
47.5
G
p
(dB)
17
D
(%)
42.5
ACPR
(dBc)
33
[1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to
2000 MHz frequency range
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