LV1502 datasheet, PDF - EEWORLD Datasheet

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LV1502: DescriptionVHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7; Categorysemiconductor Discrete semiconductor; File Size34KB，1 Pages; ManufacturerKnox; Websitehttp://www.knoxsemiconductor.com/

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LV1502 Overview

VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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HF HYPERABRUPT

TUNING DIODES

•

Extremely high capacitance ratios provide frequency tuning up to 4:1

•

Linear performance is achieved between 1.5 and 4 volts

•

Diode capacitance values ranging from 46 to 350 pF

•

Designed for use at frequencies up to 100 MHZ

LV1401 - LV1702

CAPACITANCE (pF)

f = 1 MHz

=1.25 Vdc

=2 Vdc

=7 Vdc

=10Vdc

TYP

MIN MAX

TYP

MIN MAX

81.5

6.1

4.2

5.2

TUNING RATIO

f = 1 MHz

C•1.25V / C•7V C•2V / C•10V

TYP

MIN

MAX

= 2 Vdc

f=1 MHz

f=10 MHz

MIN / TYP

200

700

140

(Vdc)

Ir = 10 µAdc

MIN

(nAdc)

= 10 Vdc

MAX

100

PART

NUMBER

LV1401

LV1402

LV1501

LV1502

180

100

150

8.6

10.6

17.5

200

500

130

100

LV1601

LV1602

255

140

210

18.5

12.6

15.4

200

500

120

100

LV1701

LV1702

325

180

270

16.2

19.8

200

500

115

100

LV1801 - LV1802

CAPACITANCE (pF)

f = 1 MHz

=2 Vdc V

=7 Vdc

TYP

MIN MAX

350

30.5 37.5

TUNING RATIO

f = 1 MHz

C•1.25V / C•7V C•2V / C•10V

MIN

MAX

TYP

= 1.25 Vdc

f=1 MHz

f=10 MHz

MIN / TYP MIN / TYP

150

300

(Vdc)

Ir = 10 µAdc

MIN

(nAdc)

= 10 Vdc

MAX

100

200

PART

NUMBER

=1.25 Vdc

MIN MAX

450

550

=10Vdc

TYP

26.5

LV1801

LV1802

Package Style

Operating Temperature (Topr)

Storage Temperature (Tstg)

Other package styles are available

DO-7

-55° to + 150°C

-65° to + 200°C

P.O. BOX 609

•

ROCKPORT, MAINE 04856

•

207-236-6076

•

FAX 207-236-9558

LV1502 Related Products

	LV1502	LV1802	LV1801	LV1601	LV1501	LV1402	LV1401
Description	VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 350 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 350 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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