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BCP53-16T3

Description
Bipolar Transistors - BJT SS GP XSTR PNP 80V
CategoryDiscrete semiconductor    The transistor   
File Size86KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BCP53-16T3 Overview

Bipolar Transistors - BJT SS GP XSTR PNP 80V

BCP53-16T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCASE 318E-04, 4 PIN
Contacts4
Manufacturer packaging codeCASE 318E-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
ConfigurationSINGLE
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
High Current
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Device Marking:
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
1.5
12
T
J
, T
stg
−65 to +150
W
mW/°C
°C
Value
−80
−100
−5.0
1.5
Unit
Vdc
Vdc
Vdc
Adc
http://onsemi.com
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
1
BASE
EMITTER 3
MARKING DIAGRAM
4
1
3
SOT−223
CASE 318E
STYLE 1
A
Y
W
XXXXX
G
2
AYW
XXXXXG
G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BCP53T1G
SBCP53−10T1G
BCP53−10T1G
SBCP53−10T1G
BCP53−16T1G
SBCP53−16T1G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Symbol
R
qJA
T
L
260
10
Max
83.3
Unit
°C/W
°C
s
BCP53−16T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 10
Publication Order Number:
BCP53T1/D

BCP53-16T3 Related Products

BCP53-16T3 BCP53-10T1
Description Bipolar Transistors - BJT SS GP XSTR PNP 80V Bipolar Transistors - BJT 1.5A 100V PNP
Is it Rohs certified? incompatible incompatible
package instruction CASE 318E-04, 4 PIN SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Manufacturer packaging code CASE 318E-04 CASE 318E-04
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Configuration SINGLE SINGLE
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn80Pb20) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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