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BAT43W-G3-18

Description
Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM
Categorysemiconductor    Discrete semiconductor   
File Size97KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAT43W-G3-18 Overview

Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM

BAT43W-G3-18 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseSOD-123
If - Forward Current200 mA
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage450 mV
Ifsm - Forward Surge Current4 A
ConfigurationSingle
TechnologySi
Ir - Reverse Current0.5 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Operating Temperature Range- 55 C to + 125 C
Pd - Power Dissipation200 mW
Factory Pack Quantity10000
trr - Reverse Recovery time5 ns
Unit Weight0.000363 oz
BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• For general purpose applications
• AEC-Q101 qualified available
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAT42W
BAT43W
ORDERING CODE
BAT42W-E3-08 or BAT42W-E3-18
BAT42W-HE3-08 or BAT42W-HE3-18
BAT43W-E3-08 or BAT43W-E3-18
BAT43W-HE3-08 or BAT43W-HE3-18
CIRCUIT
CONFIGURATION
Single
Single
TYPE MARKING
L2
Tape and reel
L3
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
Surge forward current
(1)
Power dissipation
(1)
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F
VALUE
30
200
500
4
200
UNIT
V
mA
mA
A
mW
t
p
< 1 s,
< 0.5
t
p
< 10 ms
T
amb
= 65 °C
I
FRM
I
FSM
P
tot
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Operating temperature range
Storage temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
op
T
stg
VALUE
300
125
-55 to +125
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 1.9, 23-Feb-18
Document Number: 85661
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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