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ZUMTS20TC

Description
Bipolar Transistors - BJT
Categorysemiconductor    Discrete semiconductor   
File Size18KB,1 Pages
ManufacturerDiodes Incorporated
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ZUMTS20TC Overview

Bipolar Transistors - BJT

ZUMTS20TC Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHSN
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO4 V
Maximum DC Collector Current0.025 A
Gain Bandwidth Product fT450 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Height4.01 mm
Length4.77 mm
Width2.41 mm
DC Collector/Base Gain hfe Min40
Pd - Power Dissipation330 mW
Unit Weight0.000176 oz
SOT323 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL — T3
7
ZUMTS20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
30
20
4
25
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector Cut-Off
Current
SYMBOL
I
CBO
MIN.
TYP.
MAX.
100
10
UNIT
nA
µA
CONDITIONS.
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0,
T
amb
=100°C
I
C
=7mA, V
CE
=10V*
I
C
=7mA, V
CE
=10V*
Base-Emitter Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
V
BE
h
FE
40
740
85
900
mV
f
T
275
450
MHz
I
C
=5mA, V
CE
=10V
f=100MHz
I
C
=1mA, V
CE
=10V
f=1MHz
I
E
=I
e
=0, V
CB
=10V
f=1MHz
Feedback Capacitance
C
re
0.35
0.40
pF
Collector Capacitance
C
TC
0.8
pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%

ZUMTS20TC Related Products

ZUMTS20TC
Description Bipolar Transistors - BJT
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS N
Mounting Style SMD/SMT
Package / Case SOT-323-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 30 V
Emitter- Base Voltage VEBO 4 V
Maximum DC Collector Current 0.025 A
Gain Bandwidth Product fT 450 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 4.01 mm
Length 4.77 mm
Width 2.41 mm
DC Collector/Base Gain hfe Min 40
Pd - Power Dissipation 330 mW
Unit Weight 0.000176 oz
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