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IRFB17N60K

Description
MOSFET N-Chan 600V 17 Amp
CategoryDiscrete semiconductor    The transistor   
File Size1020KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRFB17N60K Overview

MOSFET N-Chan 600V 17 Amp

IRFB17N60K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)330 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)17 A
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.42 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)340 W
Maximum pulsed drain current (IDM)68 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
99
32
47
Single
D
FEATURES
600
0.35
• Smaller TO-220 Package
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
S
G
D
S
N-Channel
MOSFET
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
17
11
68
2.7
330
17
34
340
11
- 55 to + 150
300
d
10
W/°C
mJ
A
mJ
W
V/ns
°C
N
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 2.3 mH, R
G
= 25
Ω,
I
AS
= 17 A (see fig. 12).
c. I
SD
17 A, dI/dt
380 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
www.vishay.com
1

IRFB17N60K Related Products

IRFB17N60K IRFB17N60KPBF
Description MOSFET N-Chan 600V 17 Amp MOSFET N-Chan 600V 17 Amp
Is it Rohs certified? incompatible conform to
Maker Vishay Vishay
Parts packaging code TO-220AB TO-220AB
package instruction TO-220AB, 3 PIN TO-220AB, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 330 mJ 330 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 17 A 17 A
Maximum drain current (ID) 17 A 17 A
Maximum drain-source on-resistance 0.42 Ω 0.42 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 340 W 340 W
Maximum pulsed drain current (IDM) 68 A 68 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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