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RBR1MM60ATR

Description
Schottky Diodes & Rectifiers Diode, Rectifier FRD 60V-VR 1A-IO Single
CategoryDiscrete semiconductor    diode   
File Size2MB,9 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RBR1MM60ATR Overview

Schottky Diodes & Rectifiers Diode, Rectifier FRD 60V-VR 1A-IO Single

RBR1MM60ATR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionROHS COMPLIANT, PMDU, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Samacsys DescriptionSchottky Barrier Diode: RBR1MM60A is low VF high reliability Schottky Barrier Diode, suitable for general rectification.
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RBR1MM60A
Schottky Barrier Diode
Data sheet
V
A
A
     
 
                                                 
Outline
V
R
I
o
I
FSM
60
1
20
 
 
 
 
 
 
 
   
Inner Circuit
Features
High reliability
Small power mold type
Low V
F
Application
General rectification
Structure
Silicon epitaxial planar
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Basic Ordering Unit(pcs)
3000
T
aping Code
TR
Marking
E9
Absolute Maximum Ratings (T
c
=25ºC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
(1)
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty
0.5
Reverse direct voltage
Glass epoxy mounted
60Hz half sin waveform
resistive load
T
c
=120
Max.
60Hz half sin waveform
Non-repetitive
one cycle
T
a
=25
Limits
60
60
1
20
150
-55
½
150
Unit
V
V
A
A
-
-
Note(1) T avoid occurrence of thermal runaway
actual board is to be designed to fulfill dP
d
/dT
j
<1/R
th(j-a)
.
o
Characteristics (T
j
=25ºC unless otherwise specified)
Parameter
Forward voltage
Reverse current
Attention
Symbol
V
F
I
R
Conditions
I
F
=1A
V
R
=60V
Min. Typ. Max. Unit
-
-
-
-
0.53
75
V
μA
                                                                                        
www.rohm.com
1/5
© 2016 ROHM Co., Ltd. All rights reserved.
 
2017/05/16_Rev.001

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