ISL9V2540S3S N-Channel Ignition IGBT
June 2005
ISL9V2540S3S
EcoSPARK
TM
N-Channel Ignition IGBT
250mJ, 400V
Features
!
SCIS Energy = 250mJ at T
J
= 25
o
C
!
Logic Level Gate Drive
General Description
The ISL9V2540S3S is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
EcoSPARK™
devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Applications
!
Automotive Ignition Coil Driver Circuits
!
Coil - On Plug Applications
Package
Symbol
COLLECTOR
GATE
GATE
EMITTER
COLLECTOR
(FLANGE)
R
1
R
2
JEDEC TO-263AB
D
2
-Pak
EMITTER
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev. A
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
BV
CER
BV
ECS
E
SCIS25
E
SCIS150
I
C25
I
C110
V
GEM
P
D
T
J
T
STG
T
L
T
pkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (I
C
= 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (I
C
= 10 mA)
At Starting T
J
= 25°C, I
SCIS
= 12.9A, L = 3.0mHy
At Starting T
J
= 150°C, I
SCIS
= 10A, L = 3.0mHy
Collector Current Continuous, At T
C
= 25°C, See Fig 9
Collector Current Continuous, At T
C
= 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
(HBM)
Ratings
430
24
250
150
15.5
15.3
±10
166.7
1.11
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
Package Marking and Ordering Information
Device Marking
V2540S
V2540S
Device
ISL9V2540S3ST
ISL9V2540S3S
Package
TO-263AB
TO-263AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
CER
Collector to Emitter Breakdown Voltage
I
C
= 2mA, V
GE
= 0,
R
G
= 1KΩ, See Fig. 15
T
J
= -40 to 150°C
I
C
= 10mA, V
GE
= 0,
R
G
= 0, See Fig. 15
T
J
= -40 to 150°C
I
C
= -75mA, V
GE
= 0V,
T
C
= 25°C
I
GES
= ± 2mA
V
CER
= 250V,
R
G
= 1KΩ,
See Fig. 11
T
C
= 25°C
T
C
= 150°C
370
400
430
V
BV
CES
Collector to Emitter Breakdown Voltage
390
420
450
V
BV
ECS
BV
GES
I
CER
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
30
±12
-
-
-
-
-
10K
-
±14
-
-
-
-
70
-
-
-
25
1
1
40
-
26K
V
V
µA
mA
mA
mA
Ω
Ω
I
ECS
R
1
R
2
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
V
EC
= 24V, See T
C
= 25°C
Fig. 11
T
C
= 150°C
On State Characteristics
V
CE(SAT)
V
CE(SAT)
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
C
= 6A,
V
GE
= 4V
I
C
= 10A,
V
GE
= 4.5V
T
C
= 25°C,
See Fig. 3
T
C
= 150°C
See Fig. 4
-
-
1.37
1.77
1.8
2.2
V
V
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
Gate Charge
Gate to Emitter Threshold Voltage
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
I
C
= 10A,
V
CE
= 12V
T
C
= 25°C
T
C
= 150°C
-
1.3
0.75
-
15.1
-
-
3.1
-
2.2
1.8
-
nC
V
V
V
V
GEP
Gate to Emitter Plateau Voltage
Switching Characteristics
t
d(ON)R
t
riseR
t
d(OFF)L
t
fL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C
V
CE
= 300V, L = 500µHy,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
T
J
= 25°C, L = 3.0mHy,
R
G
= 1KΩ, V
GE
= 5V, See
Fig. 1 & 2
-
-
-
-
-
0.61
2.17
3.64
2.36
-
-
-
-
-
250
µs
µs
µs
µs
mJ
Thermal Characteristics
R
θJC
Thermal Resistance Junction-Case
TO-263
-
-
0.9
°C/W
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Typical Performance Curves
40
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
35
30
25
20
15
10
T
J
= 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25
50
75
100
125
150
175
200
T
J
= 25°C
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
40
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
35
30
25
20
T
J
= 25°C
15
10
T
J
= 150°C
5
SCIS Curves valid for V
clamp
Voltages of <430V
0
0
1
2
3
4
5
6
7
L, INDUCTANCE (mHy)
8
9
10
t
CLP
, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.55
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 6A
1.50
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
2.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 10A
2.1
2.0
1.9
1.8
1.7
V
GE
= 4.5V
1.6
1.5
V
GE
= 10.0V
1.4
-50
-25
0
25
50
75
100
125
150
175
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 3.5V
V
GE
= 3.5V
1.45
V
GE
= 4.0V
V
GE
= 4.5V
1.40
1.35
V
GE
= 5.0V
V
GE
= 10.0V
1.25
-50
-25
0
25
50
75
100
125
150
175
1.30
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 5.0V
15
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.5V
10
V
GE
= 3.0V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 10.0V
V
GE
= 10.0V
V
GE
= 5.0V
15
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.5V
10
V
GE
= 3.0V
5
5
T
J
= - 40°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
www.fairchildsemi.com
ISL9V2540S3S N-Channel Ignition IGBT
Typical Performance Curves
(Continued)
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 10.0V
V
GE
= 5.0V
15
V
GE
= 4.5V
V
GE
= 4.0V
10
V
GE
= 3.5V
V
GE
= 3.0V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
DUTY CYCLE < 0.5%, V
CE
= 5V
PULSE DURATION = 250µs
15
T
J
= 175°C
10
5
5
T
J
= 25°C
T
J
= 175°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= -40°C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
16
14
I
CE
, DC COLLECTOR CURRENT (A)
12
10
8
6
4
2
0
25
1.0
-50
V
GE
= 4.0V
V
TH
, THRESHOLD VOLTAGE (V)
1.8
2.0
Figure 8. Transfer Characteristics
V
CE
= V
GE
I
CE
= 1mA
1.6
1.4
1.2
50
75
100
125
150
175
-25
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (°C)
T
J
JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10
Inductive t
OFF
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1KΩ
10000
V
ECS
= 24V
1000
LEAKAGE CURRENT (µA)
SWITCHING TIME (µS)
9
8
7
6
5
4
3
Resistive t
OFF
100
10
V
CES
= 300V
1
V
CES
= 250V
0.1
-50
-25
0
25
50
75
100
125
150
175
Resistive t
ON
2
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
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