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IS61LF6436A-8.5TQI

Description
SRAM 2Mb 64Kx36 8.5ns Sync SRAM 3.3v
Categorystorage    storage   
File Size332KB,16 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
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IS61LF6436A-8.5TQI Overview

SRAM 2Mb 64Kx36 8.5ns Sync SRAM 3.3v

IS61LF6436A-8.5TQI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerISSI(Integrated Silicon Solution Inc.)
Parts packaging codeQFP
package instructionTQFP-100
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Factory Lead Time12 weeks
Maximum access time8.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)90 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density2359296 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals100
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.035 A
Minimum standby current3.14 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
IS61LF6436A
IS61LF6432A
®
Long-term Support
World Class Quality
64Kx32, 64Kx36
SYNCHRONOUS FLOW-THROUGH STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP package
• Power Supply:
+3.3V V
dd
+3.3V or 2.5V V
ddq
• Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
• Industrial Temperature Available:
(-40
o
C to +85
o
C)
• Lead-free available
MAY 2017
DESCRIPTION
The
ISSI
IS61LF6432A and IS61LF6436A are high-speed,
low-power synchronous static RAM designed to provide
a burstable, high-performance, memory. IS61LF6432A is
organized as 65,536 words by 32 bits. IS61LF6436A is
organized as 65,536 words by 36 bits. They are fabricated
with
ISSI
's advanced CMOS technology. The device inte-
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten. BWa controls DQa, BWb controls DQb, BWc controls
DQc, BWd controls DQd, conditioned by BWE being LOW.
A LOW on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61LF6432A/36A and controlled by the
ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
8.5
8.5
11
90
Unit
ns
ns
MHz
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B1
05/08/2017
1

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