BLF548
UHF push-pull power MOS transistor
Rev. 5 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
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Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures
excellent reliability
•
Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A2
PIN
1
2
3
4
5
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source
PIN CONFIGURATION
1
halfpage
2
d2
g2
g1
s
d1
MBB157
5
3
Top view
5
4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
V
DS
(V)
28
P
L
(W)
150
G
p
(dB)
>10
η
D
(%)
>50
2003 Sep 26
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
T
mb
≤
25
°C;
total device; both sections
−
equally loaded
−65
−
MAX.
UNIT
Per transistor section
unless otherwise specified
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
65
±20
15
330
+150
200
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
CONDITIONS
T
mb
= 25
°C;
P
tot
= 330 W; total device;
both sections equally loaded
total device; both sections equally
loaded
VALUE
0.5
0.15
UNIT
K/W
K/W
handbook, halfpage
10
2
ID
(A)
MRA997
MRA532
handbook, halfpage
P
400
350
tot
(W)
(2)
300
250
200
150
100
50
1
0
(1)
(1)
(2)
10
1
10
VDS (V)
10
2
0
20
40
60
80
100
120
Th (
o
C)
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 26
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage V
GS
= 0; I
D
= 40 mA
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; V
DS
= 28 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 160 mA; V
DS
= 10 V
I
D
= 4.8 A; V
DS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
−
−
2
2.4
−
16
−
−
−
−
−
−
−
3.5
0.25
20
105
90
25
−
0.5
1
4
−
0.3
−
−
−
−
V
mA
µA
V
S
Ω
A
pF
pF
pF
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
drain-source on-state resistance I
D
= 4.8 A; V
GS
= 10 V
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
2003 Sep 26
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
3
handbook, halfpage
TC
(mV/K)
2
1
0
−1
−2
−3
−4
10
−2
MRA524
handbook, halfpage
25
MRA529
ID
(A)
20
15
10
5
10
−1
0
1
ID (A)
10
0
4
8
12
VGS (V)
16
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
handbook, halfpage
0.5
MRA522
RDSon
(Ω)
handbook, halfpage
400
MRA525
C
(pF)
300
0.4
0.3
200
0.2
Cis
100
0.1
Cos
0
0
40
80
Tj (
o
C)
120
0
0
10
20
VDS (V)
30
I
D
= 4.8 A; V
GS
= 10 V.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
2003 Sep 26
5
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