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BCR191WH6327XTSA1

Description
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCR191WH6327XTSA1 Overview

Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS

BCR191WH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BCR191...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 22 kΩ ,
R
2
= 22 kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR191
BCR191W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR191
BCR191W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR191,
T
S
102°C
BCR191W,
T
S
124°C
Junction temperature
Storage temperature
Marking
WOs
WOs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-30

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