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BCR191WE6327HTSA1

Description
TRANS PREBIAS PNP 250MW SOT323-3
Categorysemiconductor    Discrete semiconductor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCR191WE6327HTSA1 Overview

TRANS PREBIAS PNP 250MW SOT323-3

BCR191WE6327HTSA1 Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)50 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition200MHz
Power - Max250mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingPG-SOT323-3
BCR191...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 22 kΩ ,
R
2
= 22 kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR191
BCR191W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR191
BCR191W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR191,
T
S
102°C
BCR191W,
T
S
124°C
Junction temperature
Storage temperature
Marking
WOs
WOs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-30

BCR191WE6327HTSA1 Related Products

BCR191WE6327HTSA1 BCR 191 E6327 BCR 191F E6327 BCR 191W E6327 BCR191E6327HTSA1 BCR191WH6327XTSA1
Description TRANS PREBIAS PNP 250MW SOT323-3 transistors switching - resistor biased pnp silicon digital transistor trans prebias pnp 250mw tsfp-3 trans prebias pnp 250mw sot323-3 Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
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