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BSC12DN20NS3G

Description
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size306KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC12DN20NS3G Overview

MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3

BSC12DN20NS3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)11.3 A
Maximum drain current (ID)11.3 A
Maximum drain-source on-resistance0.125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
Humidity sensitivity level3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)45 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Type
BSC12DN20NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
200
125
11.3
V
A
PG-TDSON-8
Type
BSC12DN20NS3 G
Package
PG-TDSON-8
Marking
12DN20NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
11.3
8.0
45
60
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=5.7 A,
R
GS
=25
Ω
mJ
kV/µs
V
W
°C
T
C
=25 °C
50
-55 ... 150
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.2
page 1
2011-05-20

BSC12DN20NS3G Related Products

BSC12DN20NS3G BSC12DN20NS3 G
Description MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Maker Infineon Infineon
Configuration SINGLE WITH BUILT-IN DIODE Single
Maximum operating temperature 150 °C + 150 C
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