MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Forward Gate Current
Continuous Device Dissipation at or Below
T
C
= 25°C
Linear Derating Factor
Storage Channel Temperature Range
Symbol
V
DG
V
GS(r)
I
G(f)
P
D
200
2.8
T
stg
−65 to +150
mW
mW/°C
°C
Value
25
25
10
Unit
Vdc
Vdc
mAdc
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2 SOURCE
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
−55 to +150
mW
mW/°C
°C/W
°C
Max
Unit
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
1
M6B M
G
G
M6B = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBF5484LT1
MMBF5484LT1G
Package
SOT−23
Shipping
†
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MMBF5484LT1/D
MMBF5484LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (I
G
= −1.0
mAdc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= − 20 Vdc, V
DS
= 0)
(V
GS
= − 20 Vdc, V
DS
= 0, T
A
= 100°C)
V
(BR)GSS
I
GSS
V
GS(off)
−25
−
−
−0.3
−
−1.0
−0.2
−3.0
Vdc
nAdc
mAdc
Vdc
Symbol
Min
Max
Unit
Gate Source Cutoff Voltage (V
DS
= 15 Vdc, I
D
= 10 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
DS
= 15 Vdc, V
GS
= 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Input Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 10 MHz)
Output Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
I
DSS
1.0
5.0
mAdc
|Y
fs
|
|y
os
|
C
iss
C
rss
C
oss
3000
−
−
−
−
6000
50
5.0
1.0
2.0
mmhos
mmhos
pF
pF
pF
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C)
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
30
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
20
10
7.0
5.0
3.0
2.0
g
is
@ 0.25 I
DSS
1.0
0.7
0.5
0.3
10
20
30
b
is
@ I
DSS
5.0
3.0
2.0
b
rs
@ I
DSS
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
g
rs
@ I
DSS
, 0.25 I
DSS
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.25 I
DSS
g
is
@ I
DSS
b
is
@ 0.25 I
DSS
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 1. Input Admittance (y
is
)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 2. Reverse Transfer Admittance (y
rs
)
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
g
os
@ 0.25 I
DSS
g
os
@ I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
fs
@ I
DSS
g
fs
@ 0.25 I
DSS
Figure 3. Forward Transadmittance (y
fs
)
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2
Figure 4. Output Admittance (y
os
)
MMBF5484LT1
COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C, Data Points in MHz)
30°
40°
20°
10°
0°
1.0
350°
100
100
0.9
50°
300
0.8
60°
70°
80°
90°
100°
110°
120°
0.7
I
D
= I
DSS
500
400
600
500
600
0.6
800
900
700
900
700
800
280°
270°
260°
250°
240°
80°
90°
100°
110°
120°
290°
70°
400
300
200
100
0.0
280°
270°
260°
250°
240°
300°
60°
600
800
700
500
0.1
200
340°
330°
320°
40°
30°
20°
10°
0°
0.4
350°
340°
330°
320°
I
D
= 0.25 I
DSS
200
300
400
0.3
310°
50°
I
D
= I
DSS
, 0.25 I
DSS
900
0.2
300°
290°
310°
130°
230°
130°
230°
140°
150°
160°
170°
180°
190°
200°
210°
220°
140°
150°
160°
170°
180°
190°
200°
210°
220°
Figure 5. S
11s
30°
40°
20°
10°
0°
350°
340°
330°
320°
40°
30°
20°
Figure 6. S
12s
10°
0°
350°
340°
330°
100 200
I
D
= 0.25 I
DSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
I
D
= I
DSS
700
900
800
900
0.8
320°
0.6
50°
0.5
60°
70°
80°
90°
100°
110°
120°
900
800
700
600
500
400
300
I
D
= I
DSS
240°
200
100
0.5
230°
0.6
130°
120°
800
700
600
I
D
= 0.25 I
DSS
500
400
300
200
100
0.4
250°
110°
0.3
900
0.3
280°
270°
260°
80°
90°
100°
0.4
300°
290°
60°
70°
310°
50°
310°
300°
0.7
290°
280°
270°
260°
250°
240°
0.6
130°
230°
140°
150°
160°
170°
180°
190°
200°
210°
220°
140°
150°
160°
170°
180°
190°
200°
210°
220°
Figure 7. S
21s
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3
Figure 8. S
22s
MMBF5484LT1
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25°C)
20
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
20
30
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
g
ig
@ I
DSS
, 0.25 I
DSS
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.25 I
DSS
b
rg
@ I
DSS
g
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
b
ig
@ I
DSS
b
ig
@ 0.25 I
DSS
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.007
0.005
Figure 9. Input Admittance (y
ig
)
Figure 10. Reverse Transfer Admittance (y
rg
)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
30
b
fg
@ I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
b
rg
@ 0.25 I
DSS
g
og
@ 0.25 I
DSS
0.01
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 11. Forward Transfer Admittance (y
fg
)
Figure 12. Output Admittance (y
og
)
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MMBF5484LT1
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C, Data Points in MHz)
30°
40°
20°
10°
0°
0.7
100
0.6
50°
100
0.5
60°
I
D
= I
DSS
70°
80°
90°
100°
110°
120°
0.4
200
300
400
500
600
900
700
0.3
800
900
280°
270°
260°
250°
240°
80°
90°
100°
I
D
= I
DSS
110°
120°
700
800
900
130°
230°
130°
900
0.03
230°
600
100
500
600
700
800
240°
0.02
I
D
= 0.25 I
DSS
0.01
0.0
280°
270°
260°
250°
I
D
= 0.25 I
DSS
200
300
400
500
600
700
800
290°
70°
0.01
290°
0.02
300°
60°
300°
310°
50°
0.03
310°
350°
340°
330°
320°
40°
30°
20°
10°
0°
0.04
350°
340°
330°
320°
140°
150°
160°
170°
180°
190°
200°
210°
220°
140°
150°
160°
170°
0.04
180°
190°
200°
210°
220°
Figure 13. S
11g
30°
40°
20°
10°
0°
0.5
100
0.4
50°
0.3
60°
70°
80°
0.1
90°
100°
110°
120°
900
900
260°
250°
240°
100°
110°
120°
0.2
I
D
= 0.25 I
DSS
300°
290°
280°
270°
60°
70°
80°
90°
I
D
= I
DSS
100
310°
50°
350°
340°
330°
320°
40°
30°
20°
Figure 14. S
12g
10°
0°
1.5
1.0
100
0.9
350°
300
200
400
600
800
900
310°
340°
500
700
330°
320°
I
D
= I
DSS
, 0.25 I
DSS
0.8
300°
0.7
290°
280°
270°
260°
250°
240°
0.6
130°
230°
130°
230°
140°
150°
160°
170°
180°
190°
200°
210°
220°
140°
150°
160°
170°
180°
190°
200°
210°
220°
Figure 15. S
21g
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5
Figure 16. S
22g
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