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STP100N10F7

Description
MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
CategoryDiscrete semiconductor    The transistor   
File Size2MB,23 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Download user manual Parametric Compare View All

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STP100N10F7 Overview

MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W

STP100N10F7 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
package instructionTO-220, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time13 weeks
Samacsys DescriptionSTMICROELECTRONICS - STP100N10F7 - Power MOSFET, N Channel, 100 V, 80 A, 0.0068 ohm, TO-220, Through Hole
Avalanche Energy Efficiency Rating (Eas)400 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)320 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068
Ω
typ., 80 A, STripFET™ VII DeepGATE™
Power MOSFET in D
2
PAK, DPAK, TO-220FP and TO-220
Datasheet
-
production data
Features
TAB
TAB
3
1
Order codes
STB100N10F7
V
DS
R
DS(on)
max
I
D
80 A
P
TOT
120 W
120W
30 W
150 W
3
1
DPAK
TAB
D PAK
2
STD100N10F7
100 V
STF100N10F7
STP100N10F7
0.008
Ω
80 A
45 A
80A
3
2
1
3
1
2
Ultra low on-resistance
100% avalanche tested
TO-220FP
TO-220
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
Table 1. Device summary
Order codes
STB100N10F7
STD100N10F7
100N10F7
STF100N10F7
STP100N10F7
TO-220FP
TO-220
Tube
Tube
Marking
Packages
D
2
PAK
DPAK
Packaging
Tape and reel
Tape and reel
November 2013
This is information on a product in full production.
DocID023737 Rev 4
1/23
www.st.com
23

STP100N10F7 Related Products

STP100N10F7 STB100N10F7 STF100N10F7
Description MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
Brand Name STMicroelectronics STMicroelectronics -
package instruction TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code not_compliant compliant -
ECCN code EAR99 EAR99 -
Factory Lead Time 13 weeks 38 weeks -
Avalanche Energy Efficiency Rating (Eas) 400 mJ 400 mJ -
Shell connection DRAIN DRAIN -
Minimum drain-source breakdown voltage 100 V 100 V -
Maximum drain current (ID) 80 A 80 A -
Maximum drain-source on-resistance 0.008 Ω 0.008 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 320 A 320 A -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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