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AES1G

Description
175mA. Super Fast Surface Mount Rectifiers
CategoryDiscrete semiconductor    diode   
File Size28KB,1 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

AES1G Overview

175mA. Super Fast Surface Mount Rectifiers

AES1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Humidity sensitivity level1
AES1A
THRU
AES1J
175mA. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
175 mAmpere
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
O
260 C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
SOD-323F
0.094(2.40)
0.102(2.60)
0.073(1.85)
0.069(1.75)
0.016(0.4)
0.008(0.2)
0.006(0.15)
0.002(0.05)
0.051(1.3)
0.047(1.2)
0.035(0.9)
0.031(0.8)
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: tape per E1A STD RS-481
Weight: 0.01 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol AES AES AES
Type Number
1A 1B 1C
Maximum Recurrent Peak Reverse Voltage
50 100 150
V
RRM
Maximum RMS Voltage
35 70 105
V
RMS
Maximum DC Blocking Voltage
50 100 150
V
DC
Marking Code
EA EB EC
Maximum Average Forward Rectified Current
I
(AV)
@ 85℃
I
(PEAK)
@ 25℃
Peak Forward Surge Current, 8.3 ms Single
I
FSM
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
IF=175mA
@ 85℃
V
F
@ 25℃
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
AES
1D
200
140
200
ED
AES
1F
300
210
300
EF
AES
1G
400
280
400
EG
AES
1H
500
350
500
EH
AES
Units
1J
600
V
420
V
600
V
EJ
mA
175
625
20
1.25
1.45
0.1
50
5
85
35
-40 to +85
-40 to +85
A
V
uA
nS
pF
℃/W
I
R
Trr
Cj
R
θ
JA
R
θ
JL
T
J
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Area.
- 212 -

AES1G Related Products

AES1G AES1H AES1J AES1C AES1A AES1B AES1D AES1F
Description 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers 175mA. Super Fast Surface Mount Rectifiers
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compli compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1 1 1 1 1
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