This product has been retired and is not available for designs. For new and current designs,
S29GL064A supersedes Am29LV640MU and is the factory-recommended migration path. Please refer
to the S29GL064A datasheet for specifications and ordering information. Availability of this document
is retained for reference and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
25301
Revision
C
Amendment
5
Issue Date
February 1, 2007
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DATA SHEET
Am29LV640MU
64 Megabit (4 M x 16-Bit) MirrorBit™
3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV640M U and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
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