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K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
K9XXG08XXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
Document Title
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
History
1. Initial issue
1. Add 2.7V part
2. Add note of command set table
3. Add nWP timing guide
4. Endurance 10K -> 5K
Draft Date
May. 2nd 2006
Sep. 25st 2006
Remark
Advance
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2
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K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9G4G08B0A
K9G4G08U0A-P
K9G4G08U0A-I
K9L8G08U1A-I
2.7V ~ 3.6V
Vcc Range
2.5V ~ 2.9V
X8
Organization
PKG Type
MCP(TBD)
TSOP1
52ULGA
FEATURES
•
Voltage Supply
- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
•
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
•
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
•
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 30ns(Min.)
•
Memory Cell : 2bit / Memory Cell
•
Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
•
Command Register Operation
•
Unique ID for Copyright Protection
•
Package :
- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)
- K9G4G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9L8G08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9G4G08B0A : MCP(TBD)
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-
formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.
Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-
put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9G4G08X0A′s extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out
algorithm. The K9G4G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
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