SFH601
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A
C
NC
i179004-3
1
2
3
6 B
5 C
4 E
• Isolation test voltage (1.0 s), 5300 V
RMS
• V
CEsat
0.25 ( 0.4) V, I
F
= 10 mA, I
C
= 2.5 mA
• Built to conform to VDE requirements
• Highest quality premium device
• Long term stability
• Storage temperature, -55 ° to +150 °C
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
i179004-11
DESCRIPTION
The SFH601 is an optocoupler with a gallium arsenide LED
emitter which is optically coupled with a silicon planar
phototransistor detector. The component is packaged in a
plastic plug-in case 20 AB DIN 41866.
The coupler transmits signals between two electrically
isolated circuits.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDERING INFORMATION
S
F
H
6
0
1
-
#
CTR
BIN
X
0
#
#
DIP
Option 6
PART NUMBER
PACKAGE OPTION
7.62 mm
Option 7
10.16 mm
Option 9
> 0.7 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL, BSI, CSA
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
VDE, cUL, UL, BSI
DIP-6, option 1
DIP-6, 400 mil, option 6
SMD-6, option 7
SMD-6, option 9
40 to 80
SFH601-1
SFH601-1X006
SFH601-1X007
SFH601-1X009T
40 to 80
SFH601-1X001
SFH601-1X016
SFH601-1X017
-
63 to 125
SFH601-2
SFH601-2X006
SFH601-2X007T
SFH601-2X009
63 to 125
SFH601-2X001
-
CTR (%)
100 to 200
SFH601-3
SFH601-3X006
SFH601-3X007(T)
SFH601-3X009
100 to 200
-
SFH601-3X016
SFH601-3X017(T)
SFH601-3X019(T)
160 to 320
SFH601-4
SFH601-4X006
SFH601-4X007(T)
SFH601-4X009(T)
160 to 320
SFH601-4X001
SFH601-4X016
-
-
SFH601-2X017(T)
-
Note
• For additional information on the available options refer to option information.
Rev. 1.6, 23-Jul-15
Document Number: 83663
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH601
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t = 10 μs
I
FSM
P
diss
V
CEO
V
EBO
I
C
t = 1.0 ms
I
C
P
diss
T
stg
T
amb
T
j
Max. 10 s, dip soldering:
distance to seating plane
1.5
mm
T
sld
VALUE
6
60
2.5
100
100
7
50
100
150
-55 to +150
-55 to +100
100
260
UNIT
V
mA
A
mW
V
V
mA
mA
mW
°C
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
SFH601-1
Collector emitter leakage current
V
CE
=10 V
SFH601-2
SFH601-3
SFH601-4
COUPLER
Saturation voltage collector emitter
Capacitance (input to output)
I
F
= 10 mA, I
C
= 2.5 mA
V
I-O
= 0, f = 1 MHz
V
CEsat
C
IO
-
-
0.25
0.6
0.4
-
V
pF
f = 1 MHz, V
CE
= 5 V
f = 1 MHz, V
CB
= 5 V
f = 1 MHz, V
EB
= 5 V
C
CE
C
CB
C
EB
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
-
-
-
-
-
-
-
-
6.8
8.5
11
500
2
2
5
5
-
-
-
-
50
50
100
100
pF
pF
pF
K/W
nA
nA
nA
nA
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
thja
-
6
-
-
-
1.25
-
0.01
25
750
1.65
-
10
-
-
V
V
μA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.6, 23-Jul-15
Document Number: 83663
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH601
www.vishay.com
Vishay Semiconductors
PART
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
TYP.
-
-
-
-
30
45
70
90
MAX.
80
125
200
320
-
-
-
-
UNIT
%
%
%
%
%
%
%
%
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 10 mA
I
C
/I
F
at V
CE
= 5.0 V
I
F
= 1 mA
Note
• Current transfer ratio and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Current
Rise time
Fall time
Turn-on time
Turn-off time
SATURATED
SFH601-1
Current
SFH601-2
SFH601-3
SFH601-4
SFH601-1
Rise time
SFH601-2
SFH601-3
SFH601-4
SFH601-1
Fall time
SFH601-2
SFH601-3
SFH601-4
SFH601-1
Turn-on time
SFH601-2
SFH601-3
SFH601-4
SFH601-1
Turn-off time
SFH601-2
SFH601-3
SFH601-4
R
L
= 7 5
Ω
I
C
V
CC
= 5 V
TEST CONDITION
V
CC
= 5 V, R
L
= 75
V
CC
= 5 V, R
L
= 75
V
CC
= 5 V, R
L
= 75
V
CC
= 5 V, R
L
= 75
V
CC
= 5 V, R
L
= 75
PART
SYMBOL
I
F
t
r
t
f
t
on
t
off
I
F
I
F
I
F
I
F
t
r
t
r
t
r
t
r
t
f
t
f
t
f
t
f
t
on
t
on
t
on
t
on
t
off
t
off
t
off
t
off
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
10
2
2
3
2.3
20
10
10
0.5
2
3
3
4.6
11
14
14
15
3
4.2
4.2
6
18
23
23
25
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
mA
μs
μs
μs
μs
mA
mA
mA
mA
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
I
F
I
F
1k
Ω
V
CC
= 5 V
47
Ω
isfh601_01
isfh601_02
47
Ω
Fig. 1 - Linear Operation (without Saturation)
Rev. 1.6, 23-Jul-15
Fig. 2 - Switching Operation (with Saturation)
Document Number: 83663
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH601
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Comparative tracking index
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Isolation resistance
Output safety power
Input safety current
Input safety temperature
Creepage distance
Clearance distance
Creepage distance
Clearance distance
Insulation thickness
Standard DIP-4
Standard DIP-4
400 mil DIP-4
400 mil DIP-4
DTI
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
t = 1 min
TEST CONDITION
According to IEC 68 part 1
CTI
V
ISO
V
IOTM
V
IORM
R
IO
R
IO
P
SO
I
SI
T
SI
SYMBOL
VALUE
55 / 100 / 21
175
4420
8000
890
10
12
10
11
700
400
175
7
7
8
8
0.4
V
RMS
V
V
mW
mA
°C
mm
mm
mm
mm
mm
UNIT
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
3
5
10
3
(T
A
= - 25 ˚C, V
CE
= 5.0 V)
I
C
/I
F
= f (I
F
)
4
3
5
DC
(T
A
= 0 °C, V
CE
= 5.0 V)
Pulsmode
I
C
/I
F
= f (I
F
)
Pulse
4
3
2
1
I
C
(%)
I
F
10
2
5
2
1
I
C
(%)
I
F
2
10
2
5
10
0
10
-1
isfh601_03
5
10
0
5
10
1
10
0
10
-1
isfh601_04
5
10
0
5
10
1
2
I
F
(mA)
I
F
(mA)
Fig. 3 - Current Transfer Ratio vs. Diode Current
Fig. 4 - Current Transfer Ratio vs. Diode Current
Rev. 1.6, 23-Jul-15
Document Number: 83663
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH601
www.vishay.com
Vishay Semiconductors
10
3
5
10
3
5
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
4
3
2
1
I
C
(%)
I
F
IC/IF = f (IF)
3
2
1
I
C
(%)
I
F
VCE = 5.0 V)
4
10
2
5
10
2
5
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
10
0
10
-1
isfh601_05
5
10
0
5
10
1
2
10
1
-25
isfh601_08
0
25
50
°C
75
I
F
(mA)
T
A
(°C)
Fig. 5 - Current Transfer Ratio vs. Diode Current
Fig. 8 - Current Transfer Ratio vs. Diode Current
10
3
5
DC
Pulsbetrieb
Pulse
TA = 50 °C, VCE = 5.0 V)
IC/IF = f (IF)
4
30
DC
Pulsbetrieb
Pulse
I
B
= 40 µA
I
B
= 30 µA
I
B
= 20 µA
I
C
(%)
I
F
10
2
5
2
1
I
C
(mA)
10
3
20
IC = f (VCE)
(IF = 0)
I
B
= 10 µA
I
B
= 5 µA
I
B
= 2 µA
10
0
10
-1
isfh601_06
5
10
0
5
10
1
2
0
0
5
I
F
(mA)
isfh601_09
V
CE
10
15
Fig. 6 - Current Transfer Ratio vs. Diode Current
Fig. 9 - Transistor Characteristics
10
3
5
DC
Pulsbetrieb
Pulse
TA = 75 °C, VCE = 5.0 V)
IC/IF = f (IF)
4
3
2
1
30
DC
Pulsbetrieb
Pulse
I
F
= ± 14 mA
I
F
= ± 12 mA
(%)
20
I
F
= ± 10 mA
IC = f (VCE)
I
F
= ± 8 mA
I
F
= ± 6 mA
I
F
= ± 4 mA
I
F
= ± 1 mA
I
F
= ± 2 mA
10
2
5
I
c
(mA)
I
C
I
F
10
10
0
10
-1
isfh601_07
5
10
0
I
F
(mA)
5
10
1
2
0
0
5
isfh601_10
V
CE
10
15
Fig. 7 - Current Transfer Ratio vs. Diode Current
Fig. 10 - Output Characteristics
Rev. 1.6, 23-Jul-15
Document Number: 83663
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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