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JAN1N5616EG1

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

JAN1N5616EG1 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL

JAN1N5616EG1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-PRF-19500/427
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time2 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
MIL
I
R
TA
Y
Q
UA
L
I
FI
ED
JAN1N5614EG1 thru
JAN1N5622EG1
Glass Passivated Rectifiers
Reverse Voltage
200 to 1000V
Forward Current
1.0A
DO-204AL (EG1)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
Features
Qualified to MIL-PRF-19500/427
• Class 1 high temperature metallurgically bonded
construction brazed > 600°C
• 1.0 ampere operation at T
A
=55°C with no thermal runaway
• Typical I
R
less than 0.1µA
• Cavity-free, glass passivated junction. In epoxy over
hermetic glass.
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205 (5.2)
0.160 (4.1)
®
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
d*
Mechanical Data
nte
ate
P
Dimensions in inches and (millimeters)
* Glass-plastic encapsulation technique is covered by Patent No.
3,996,602 and brazed-lead assembly by Patent No. 3,930,306
Case:
DO-204AL, molded epoxy over glass body (EG1)
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.015 ounce, 0.4 gram
Flammability:
Epoxy is rated UL 94V-0.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at T
A
=55°C
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals super-imposed on I
O
= 750mA DC;
V
R
= rated V
RRM
T
A
= 100°C (per MIL-STD-750 m 4066)
Typical thermal resistance
(NOTE 1)
Operating junction and storage temperature range
Barometric Pressure
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
JAN
JAN
JAN
JAN
JAN
1N5614 1N5616 1N5618 1N5620 1N5622
200
140
200
400
280
400
600
420
600
1.0
800
560
800
1000
700
1000
Unit
V
V
V
A
I
FSM
R
ΘJL
R
ΘJA
T
J
, T
STG
Hg
8
25
38
45
–65 to +175
33
A
°C/W
°C
mm
Electrical Characteristics
Maximum instantaneous forward voltage
Tp = 300
µs
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum reverse breakdown voltage at 50µA
at 1.0A
at 3.0A
T
A
= 25°C
T
A
= 100°C
V
BR
V
F
I
R
t
rr
C
J
220
440
660
1.1
1.3
0.5
25
2.0
15
880
1100
V
V
µA
µs
pF
8/7/01
Maximum junction capacitance at 4V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

JAN1N5616EG1 Related Products

JAN1N5616EG1 JAN1N5620EG1 JAN1N5622EG1 JAN1N5614EG1 JAN1N5618EG1
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-204AL DO-204AL DO-204AL DO-204AL DO-204AL
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 25 A 25 A 25 A 25 A 25 A
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-PRF-19500/427 MIL-PRF-19500/427 MIL-PRF-19500/427 MIL-PRF-19500/427 MIL-PRF-19500/427
Maximum repetitive peak reverse voltage 400 V 800 V 1000 V 200 V 600 V
Maximum reverse recovery time 2 µs 2 µs 2 µs 2 µs 2 µs
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 1
package instruction - - O-PALF-W2 O-PALF-W2 O-PALF-W2

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