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M366S1623DT0-C75

Description
PC133 Unbuffered DIMM
Categorystorage    storage   
File Size103KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

M366S1623DT0-C75 Overview

PC133 Unbuffered DIMM

M366S1623DT0-C75 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density1073741824 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.016 A
Maximum slew rate1.28 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
M366S1623DT0
Revision History
Revision 0.0 (June, 1999)
• PC133 first published.
PC133 Unbuffered DIMM
Revision 0.1 (May, 2000)
• Changed tOH parameter from 2.7ns to 3.0ns
Revision 0.2 (July, 2000)
• Added PC100@CL3 data on
DC Characteristics, Operating AC Parameter, AC Characteristics.
REV. 0.2 July, 2000
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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