MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1 series,
two BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a
premium.
(3)
R
1
Q
1
(2)
R
2
(1)
Q
2
R
2
(4)
R
1
(5)
(6)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6
1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
XX
d
1
XX = Specific Device Code
d
= Date Code
=
(See Page 2)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Thermal Resistance −
Junction-to-Lead
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
−55 to +150
Unit
mW
mW/°C
°C/W
R
θJA
DEVICE MARKING INFORMATION
Unit
mW
mW/°C
°C/W
°C/W
°C
Preferred
devices are recommended choices for future use
and best overall value.
See specific marking information in the device marking table
on page 2 of this data sheet.
Symbol
P
D
R
θJA
R
θJL
T
J
, T
stg
©
Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 5
Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
Package
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Marking
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
7N
7P
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3.) (I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
http://onsemi.com
2
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
−
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5230DW1T1/MUN5231DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
MUN5230DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
Vdc
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
http://onsemi.com
3
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.) (Continued)
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
k
Ω
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
5. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
R1/R2
ALL MUN5211DW1T1 SERIES DEVICES
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
θJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
http://onsemi.com
4
MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
