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BCW65BTC

Description
Bipolar Transistors - BJT
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerDiodes Incorporated
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Bipolar Transistors - BJT

BCW65BTC Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC50002-233
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65B – EB
BCW65C – EC
BCW66F – EF
BCW66G – EG
BCW66H – EH
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
BCW65AR –
BCW65BR –
BCW65CR –
BCW66FR –
BCW66GR –
BCW66HR –
4V
5V
6V
7P
5T
7M
BCW65
BCW66
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
BCW65
60
32
5
800
1000
100
330
-55 to +150
BCW66
75
45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 27

BCW65BTC Related Products

BCW65BTC
Description Bipolar Transistors - BJT
Maker Diodes Incorporated
Parts packaging code SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3
Contacts 3
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 0.8 A
Collector-emitter maximum voltage 32 V
Configuration SINGLE
Minimum DC current gain (hFE) 110
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type NPN
Certification status Not Qualified
Guideline CECC50002-233
surface mount YES
Terminal form GULL WING
Terminal location DUAL
Transistor component materials SILICON
Nominal transition frequency (fT) 100 MHz
Maximum off time (toff) 400 ns
Maximum opening time (tons) 100 ns
Base Number Matches 1
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