NCP340
Soft-Start Controlled Load
Switch
The NCP340 is a low Ron N−channel MOSFET controlled by a
soft−start sequence of 2 ms for mobile applications.
The very low R
DS(on)
allows system supplying or battery charging
up to DC 3A.The device is enable automatically if a Power Supply is
connected on Vin pin (active High) and maintained off if no Vin
(internal pull down).
Due to a current consumption optimization, leakage current is
drastically decreased from the battery connected to the device,
allowing long battery life.
Features
http://onsemi.com
MARKING
DIAGRAM
1
UDFN4
CASE 517CE
34
M
34 M
•
•
•
•
•
•
•
1.8 V
−
5.5 V Operating Range
30 mW N−MOSFET
DC Current Up to 3 A
Built−in Soft−Start 2 ms
Reverse Voltage Protection
Active High with Integrated Bridge
Compliance to IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
•
ESD Ratings: Machine Model = B
Human Body Model = 3
•
mDFN4
1.2 x 1.6 mm
•
This is a Pb−Free Device
Typical Applications
= Specific Device Code
= Date Code
PINOUT
IN
PAD1
GND
OUT
EN
•
•
•
•
•
Mobile Phones
Tablets
Digital Cameras
GPS
Computers
Vbat
TVS
ESD9x
IN
OUT
NCP340
EN
EN
GND
1
mF
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
USB
Port
VBUS
D+
D−
GND
4
IN
CMIC
OUT
SBC Charger
SYSTEM
Supply
HS
Monitoring USB
Signal
Routing
Accessory
Detection and ID
I@C
Figure 1. Typical Application Circuit
©
Semiconductor Components Industries, LLC, 2013
June, 2013
−
Rev. 0
1
Publication Order Number:
NCP340/D
NCP340
PIN FUNCTION DESCRIPTION
Pin Name
IN
GND
EN
OUT
PAD1
Pin
Number
1
2
3
4
Type
POWER
POWER
INPUT
OUTPUT
POWER
Description
Power−switch input voltage; connect a 1
mF
or greater ceramic capacitor from IN to GND as
close as possible to the IC.
Ground connection;
Enable input, logic high turns on power switch.
Power−switch output; connect a 1
mF
ceramic capacitor from OUT to GND as close as pos-
sible to the IC is recommended.
Exposed pad can be connected to GND plane for dissipation purpose or any other thermal
plane.
BLOCK DIAGRAM
IN: Pin1
1
mF
Gate driver and soft
start control
OUT: Pin 4
Battery
VREF
Charge
Pump
EN: 3
EN block
2
Figure 2. Block Diagram
http://onsemi.com
2
NCP340
MAXIMUM RATINGS
Rating
IN, OUT, EN, Pins:
From IN to OUT Pins: Input/Output
ESD Withstand Voltage (IEC 61000−4−2) (Note 1)
(IN and OUT when bypassed with 1.0
mF
capacitor minimum)
Human Body Model (HBM) ESD Rating are (Notes 2 and 3)
Machine Model (MM) ESD Rating are (Notes 2 and 3)
Latch−up protection (Note 4)
−
Pins IN, OUT, EN
Maximum Junction Temperature Range
Storage Temperature Range
Moisture Sensitivity (Note 5)
Symbol
V
EN ,
V
IN ,
V
OUT
V
IN ,
V
OUT
ESD IEC
ESD HBM
ESD MM
LU
T
J
T
STG
MSL
Value
−0.3
to + 7.0
−7.0
to + 7.0
15 Air, 8 contact
8000
250
100
−40
to + 125
−40
to + 150
Level 1
Unit
V
V
kV
V
V
mA
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Guaranteed by design.
2. According to JEDEC standard JESD22−A108.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM)
±2.0
kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM)
±200
V per JEDEC standard: JESD22−A115 for all pins.
4. Latch up Current Maximum Rating:
±100
mA per JEDEC standard: JESD78 class II.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
OPERATING CONDITIONS
Symbol
V
IN
V
EN
T
A
T
J
C
IN
C
OUT
R
qJA
I
OUT
I peak
P
D
Parameter
Operational Power Supply
Enable Voltage
Ambient Temperature Range
Junction Temperature Range
Decoupling input capacitor
Decoupling output capacitor
Thermal Resistance Junction to Air
Maximum DC current
Maximum Peak current
Power Dissipation Rating (Note 7)
T
A
≤
25°C
T
A
= 85°C
6. The R
qJA
is dependent of the PCB heat dissipation.
7. The maximum power dissipation (P
D
) is given by the following formula:
USB port per Hub
UDFN4 package (Note 6)
UDFN4 package
100
ms
pulse
UDFN4 package
UDFN4 package
0.58
0.225
Conditions
Min
1.8
0
−
40
−
40
1
1
170
3
15
25
25
Typ
Max
5.5
5.5
+ 85
+ 125
°C
°C
mF
mF
°C/W
A
A
W
Unit
V
P
D
+
T
JMAX
*
T
A
R
qJA
http://onsemi.com
3
NCP340
ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between
−40°C
to +85°C and T
J
up to + 125
°C
for
VIN
between
1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T
A
= + 25
°C
and
VIN
= 5 V.
Symbol
POWER SWITCH
R
DS(on)
T
R
T
F
T
on
Static drain−source on−state
resistance
Output rise time
Output fall time
Gate turn on
V
IN
= 3 V,
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 3 V
ENABLE INPUT EN
V
IH
V
IL
R
pd
R
pu
I
REV
Iq
High−level input voltage
Low−level input voltage
En pull−down resistor
En pull−up resistor
1
1.5
1.15
0.85
V
V
MW
MW
T
J
= 25°C
−40°C
< T
J
< 125°C
C
LOAD
= 1
mF,
R
LOAD
= 125
W
(Note 8)
C
LOAD
= 100
mF,
R
LOAD
= 40
W
(Note 8)
From Vin applied to V
OUT
=
10% of fully on
From Vin applied to V
OUT
=
10% of fully on (Note 9)
0.5
0.5
2
4
2
4
3
26
50
4
ms
ms
ms
mW
Parameter
Conditions
Min
Typ
Max
Unit
REVERSE−LEAKAGE PROTECTION
Reverse−current protection
V
IN
= 0 V, V
out
= 4.2 V (part disable), T
J
= 25°C
No load
0.15
1
mA
QUIESCENT CURRENT
Current consumption
100
200
mA
8. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUT pin with respect to the ground.
9. Guaranteed by characterization.
http://onsemi.com
4
NCP340
TYPICAL CHARACTERISTICS
140
I
q
, SUPPLY CURRENT (mA)
120
100
80
60
40
20
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
T
A
=
−40°C
I
REV
, REVERSE CURRENT (mA)
T
A
= 85°C
T
A
= 25°C
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
T
A
= 25°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
OUT
, OUTPUT VOLTAGE (V)
T
A
=
−40°C
T
A
= 85°C
V
IN
, INPUT VOLTAGE (V)
Figure 3. Supply Current vs. Voltage
50
45
R
DS(on)
(mW)
R
DS(on)
(mW)
40
35
30
25
20
I
OUT
= 3 A
I
OUT
= 2 A
I
OUT
= 1 A
I
OUT
= 0.5 A
50
45
40
35
30
25
20
Figure 4. Reverse Current vs. Output Voltage
I
OUT
= 2 A
I
OUT
= 3 A
I
OUT
= 0.5 A
I
OUT
= 1 A
1.8
3.0
4.2
5.4
1.8
3.0
4.2
5.4
V
IN
, INPUT VOLTAGE (V)
V
IN
, INPUT VOLTAGE (V)
Figure 5. R
DS(on)
vs. V
IN
Voltage at 255C
50
45
R
DS(on)
(mW)
R
DS(on)
(mW)
40
35
30
25
20
I
OUT
= 1 A
1.8
3.0
4.2
I
OUT
= 0.5 A
5.4
20
0
I
OUT
= 2 A
50
45
40
35
30
25
Figure 6. R
DS(on)
vs. V
IN
Voltage at 855C
V
IN
= 1.8 V
V
IN
= 3.0 V
V
IN
= 5.5 V
V
IN
= 5.0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
OUT
= 3 A
V
IN
, INPUT VOLTAGE (V)
I
OUT
, OUTPUT CURRENT (A)
Figure 7. R
DS(on)
vs. V
IN
Voltage at
−405C
Figure 8. R
DS(on)
vs. I
OUT
at 255C
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
