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BDW24A-S

Description
Darlington Transistors 100V 6A PNP
Categorysemiconductor    Discrete semiconductor   
File Size66KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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Darlington Transistors 100V 6A PNP

BDW24A-S Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerBourns
Product CategoryDarlington Transistors
RoHSDetails
Collector- Emitter Voltage VCEO Max60 V
PackagingCut Tape
PackagingReel
Factory Pack Quantity15000
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW23, BDW23A, BDW23B and BDW23C
50 W at 25°C Case Temperature
6 A Continuous Collector Current
Minimum h
FE
of 750 at 2 A, 3 V
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW24
Collector-base voltage (I
E
= 0)
BDW24A
BDW24B
BDW24C
BDW24
Collector-emitter voltage (I
B
= 0)
BDW24A
BDW24B
BDW24C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-6
-0.2
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

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