BD241B-S datasheet, PDF - EEWORLD Datasheet

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BD241B-S: DescriptionBipolar Transistors - BJT 80V 3A NPN; CategoryDiscrete semiconductor The transistor; File Size59KB，4 Pages; ManufacturerBourns; Websitehttp://www.bourns.com; Environmental Compliance

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BD241B-S Overview

Bipolar Transistors - BJT 80V 3A NPN

BD241B-S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Bourns
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD242 Series

40 W at 25°C Case Temperature

3 A Continuous Collector Current

5 A Peak Collector Current

Customer-Specified Selections Available

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

BD241

Collector-emitter voltage (R

= 100

Ω)

BD241A

BD241B

BD241C

BD241

Collector-emitter voltage (I

= 30 mA)

BD241A

BD241B

BD241C

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1.

EBO

tot

½LI

stg

CEO

CER

SYMBOL

VALUE

115

100

-65 to +150

250

°C

UNIT

This value applies for t

≤

0.3 ms, duty cycle

≤

10%.

Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 0.4 A, R

= 100

Ω,

BE(off)

= 0, R

= 0.1

Ω,

= 20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP

BD241B-S Related Products

	BD241B-S	BD241	BD241C	BD241C-S	BD241-S	BD241A-S	BD241B
Description	Bipolar Transistors - BJT 80V 3A NPN	Bipolar Transistors - BJT 40W NPN Silicon	Bipolar Transistors - BJT 40W NPN Silicon	Bipolar Transistors - BJT 100V 3A NPN	Bipolar Transistors - BJT 45V 3A NPN	Bipolar Transistors - BJT 60V 3A NPN	Bipolar Transistors - BJT 40W NPN Silicon
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	conform to	conform to	incompatible
Maker	Bourns	Bourns	Bourns	Bourns	Bourns	Bourns	Bourns
Reach Compliance Code	not_compliant	compliant	compliant	unknown	not_compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Configuration	SINGLE	SINGLE	SINGLE	Single	SINGLE	Single	SINGLE
Minimum DC current gain (hFE)	10	10	10	10	10	10	10
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W	40 W	40 W	40 W
surface mount	NO	NO	NO	NO	NO	NO	NO
Is it lead-free?	Lead free	Contains lead	Contains lead	-	Lead free	-	Contains lead
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	-	TO-220AB	-	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	-	3	-	3
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR	-	COLLECTOR
Collector-emitter maximum voltage	80 V	45 V	100 V	-	45 V	-	80 V
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	-	TO-220AB	-	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	-	R-PSFM-T3
Number of components	1	1	1	-	1	-	1
Number of terminals	3	3	3	-	3	-	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	-	SILICON
Base Number Matches	1	-	-	1	1	1	1

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