74LVX20
LOW VOLTAGE CMOS DUAL 4-INPUT NAND GATE
WITH 5V TOLERANT INPUTS
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HIGH SPEED:
t
PD
= 4.1ns (TYP.) at V
CC
= 3.3V
5V TOLERANT INPUTS
INPUT VOLTAGE LEVEL:
V
IL
=0.8V, V
IH
=2V at V
CC
=3V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
=25°C
LOW NOISE:
V
OLP
= 0.3V (TYP.) at V
CC
= 3.3V
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 20
IMPROVED LATCH-UP IMMUNITY
POWER DOWN PROTECTION ON INPUTS
SOP
TSSOP
s)
t(
Table 1: Order Codes
PACKAGE
SOP
TSSOP
T&R
74LVX20MTR
74LVX20TTR
DESCRIPTION
The 74LVX20 is a low voltage CMOS DUAL
4-INPUT NAND GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology. It is ideal for low power, battery
operated and low noise 3.3V applications.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin Connection And IEC Logic Symbols
August 2004
Rev. 3
1/11
74LVX20
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
PIN N°
1, 9
2, 10
3, 11
4, 12
5, 13
6, 8
7
14
SYMBOL
1A to 2A
1B to 2B
N.C.
1C to 2C
1D to 2D
1Y to 2Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Not Connected
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
Table 3: Truth Table
A
B
C
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Y
L
X
X
X
H
X
L
X
X
H
X
X
L
X
H
X
X
X
L
H
H
H
H
H
L
X : Don‘t Care
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Table 4: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
I
IK
I
O
Parameter
Value
Unit
V
V
V
Supply Voltage
-0.5 to +7.0
-0.5 to +7.0
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Current
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
mA
mA
mA
°C
°C
I
OK
DC Output Diode Current
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
±
50
300
mA
-65 to +150
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Table 5: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
Parameter
Value
Unit
V
V
Supply Voltage (note 1)
Input Voltage
Output Voltage
2 to 3.6
0 to 5.5
0 to V
CC
0 to 100
V
T
op
dt/dv
Operating Temperature
Input Rise and Fall Time (note 2) (V
CC
= 3.3V)
-55 to 125
°C
ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2.0V
2/11
74LVX20
Table 6: DC Specifications
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0
3.6
2.0
3.0
3.6
2.0
3.0
3.0
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
T
A
= 25°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
1.9
2.9
2.4
Max.
-55 to 125°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
V
OH
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V
OL
Low Level Output
Voltage
2.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
3.0
0.36
0.44
±
1
20
0.55
±
1
20
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
3.6
3.6
V
I
= 5V or GND
±
0.1
2
V
I
= V
CC
or GND
s)
t(
V
V
µA
µA
Table 7: Dynamic Switching Characteristics
Test Condition
Value
Symbol
Parameter
V
CC
(V)
3.3
3.3
T
A
= 25°C
Typ.
0.3
-40 to 85°C
-55 to 125°C
Min.
Max.
Unit
Min.
Max.
0.5
Min.
Max.
V
OLP
V
OLV
V
IHD
V
ILD
Dynamic Low
Voltage Quiet
Output (note 1, 2)
Dynamic High
Voltage Input (note
1, 3)
Dynamic Low
Voltage Input (note
1, 3)
-0.5
2
-0.3
C
L
= 50 pF
V
3.3
0.8
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
3/11
74LVX20
Table 8: AC Electrical Characteristics
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.7
2.7
3.3
(*)
t
OSLH
t
OSHL
Output To Output
Skew Time (note1,
2)
3.3
(*)
2.7
3.3
(*)
C
L
(pF)
15
50
15
50
50
50
4.1
6.6
0.5
0.5
T
A
= 25°C
Min.
Typ.
Max.
8.6
13.5
6.2
9.7
1.0
1.0
Value
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
Max.
10.5
15.4
7.5
11.0
1.5
1.5
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
Max.
11.5
16.4
9.5
12.0
1.5
1.5
ns
Unit
t
PLH
t
PHL
Propagation Delay
Time
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Table 9: Capacitive Characteristics
Test Condition
Value
Symbol
Parameter
V
CC
(V)
3.3
T
A
= 25°C
Typ.
4
-40 to 85°C
-55 to 125°C
Min.
Max.
10
Min.
Max.
10
Min.
Max.
10
C
IN
Input Capacitance
Power Dissipation
Capacitance
(note 1)
C
PD
3.3
19
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch-
ing in the same direction, either HIGH or LOW
2) Parameter guaranteed by design
(*) Voltage range is 3.3V
±
0.3V
s)
t(
ns
Unit
pF
pF
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/2 (per gate)
Figure 3: Test Circuit
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
4/11
Test/Measurement
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