IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA316-600E
3Q Hi-Com Triac
5 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package.
This "series E" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power
drivers including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
10
mA
-
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
140
16
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20A
B
NXP Semiconductors
BTA316-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
-
Max
10
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA316-600E
BTA316-600E/DG
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
7. Marking
Table 4.
Marking codes
Marking code
BTA316-600EDG
Type number
BTA316-600E
BTA316-600E/DG
BTA316-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 August 2014
2 / 13
NXP Semiconductors
BTA316-600E
3Q Hi-Com Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
20
P
tot
(W)
15
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
16
140
150
98
100
2
5
0.5
150
125
003aab689
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
Total power dissipation as a function of RMS on-state current; maximum values
BTA316-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 August 2014
3 / 13
NXP Semiconductors
BTA316-600E
3Q Hi-Com Triac
20
I
T(RMS)
(A)
16
003aab684
I
T(RMS)
(A)
50
40
60
003aab685
12
30
8
20
4
10
0
10
-2
0
-50
0
50
100
150
T
mb
(°C)
10
-1
1
10
surge duration (s)
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 3.
f = 50 Hz; T
mb
= 101 °C
RMS on-state current as a function of surge
duration; maximum values
003aab668
160
I
TSM
(A)
120
80
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 August 2014
4 / 13
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