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IRLR8113TRPBF

Description
MOSFET 30V 1 N-CH HEXFET 6mOhms 22nC
Categorysemiconductor    Discrete semiconductor   
File Size262KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRLR8113TRPBF Overview

MOSFET 30V 1 N-CH HEXFET 6mOhms 22nC

IRLR8113TRPBF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current94 A
Rds On - Drain-Source Resistance7.4 mOhms
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation89 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
TypeHEXFET Power MOSFET
Width6.22 mm
Fall Time10 ns
Rise Time3.8 ns
Factory Pack Quantity2000
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time9.2 ns
Unit Weight0.139332 oz
PD - 95779A
IRLR8113PbF
IRLU8113PbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low R
DS
(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
30V
6.0m
:
Qg
22nC
D-Pak
IRLR8113
I-Pak
IRLU8113
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
Units
V
™
f
67
f
94
380
89
44
± 20
A
W
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
0.59
-55 to + 175
W/°C
°C
300 (1.6mm from case)
10 lbf in (1.1 N m)
x
x
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.69
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
12/7/04

IRLR8113TRPBF Related Products

IRLR8113TRPBF IRLR8113PBF
Description MOSFET 30V 1 N-CH HEXFET 6mOhms 22nC MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
Product Attribute Attribute Value Attribute Value
Manufacturer Infineon Infineon
Product Category MOSFET MOSFET
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case TO-252-3 TO-252-3
Number of Channels 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Id - Continuous Drain Current 94 A 94 A
Rds On - Drain-Source Resistance 7.4 mOhms 7.4 mOhms
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 22 nC 22 nC
Configuration Single Single
Pd - Power Dissipation 89 W 89 W
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Transistor Type 1 N-Channel 1 N-Channel
Width 6.22 mm 6.22 mm
Factory Pack Quantity 2000 75
Unit Weight 0.139332 oz 0.139332 oz
Packaging Reel Tube
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