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BAS20LT3G

Description
Diodes - General Purpose, Power, Switching 200V SOT23
CategoryDiscrete semiconductor    diode   
File Size69KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Diodes - General Purpose, Power, Switching 200V SOT23

BAS20LT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionTO-236, 3 PIN
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.625 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Continuous Forward Current
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Repetitive Peak Forward Current
(Pulse Train: T
ON
= 1 s, T
OFF
= 0.5 s)
Junction and Storage Temperature
Range
Power Dissipation (Note 1)
Electrostatic Discharge
V
RRM
120
200
250
I
F
I
FSM
I
FRM
T
J
, T
stg
P
D
ESD
200
2
0.6
−55 to +150
385
HM < 500
MM < 400
mAdc
A
A
°C
mW
V
V
1
2
Symbol
V
R
120
200
250
Vdc
Value
Unit
Vdc
www.onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
CATHODE
SC−88A
5
CATHODE
4
CATHODE
1
ANODE
3
ANODE
1
ANODE
MARKING DIAGRAMS
3
3
Jx M
G
G
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
5
3
1
SC−88A (SOT−353)
CASE 419A
4
Jx M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
1
2
3
x
= P, R, or S
P
= BAS19L
R
= BAS20L
S
= BAS21L or BAS21DW5
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 1999
1
November, 2016 − Rev. 18
Publication Order Number:
BAS19LT1/D

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