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BC850CWH6327XTSA1

Description
Bipolar Transistors - BJT AF TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size872KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BC850CWH6327XTSA1 Overview

Bipolar Transistors - BJT AF TRANSISTOR

BC850CWH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
BC847...-BC850...
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC857...-BC860...(PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
1)
1
BC847BL3
is not qualified according AEC Q101
Type
BC847A
BC847B
BC847BL3*
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
BC850BW
BC850C
BC850CW
Marking
1Es
1Fs
1F
1Fs
1Gs
1Gs
1Js
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
2Fs
2Fs
2Gs
2Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
* Not qualified according AEC Q101
1
2011-09-09

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Description Bipolar Transistors - BJT AF TRANSISTOR Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR Bipolar Transistors - BJT AF TRANSISTORS Bipolar Transistors - BJT AF TRANSISTORS Bipolar Transistors - BJT AF TRANSISTORS Bipolar Transistors - BJT AF TRANSISTOR Bipolar Transistors - BJT AF TRANSISTOR Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR Bipolar Transistors - BJT AF TRANSISTORS
Is it Rohs certified? conform to conform to conform to - conform to conform to - conform to conform to
Maker Infineon Infineon Infineon - Infineon Infineon - Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - CHIP CARRIER, R-XBCC-N3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant - compliant compliant - compliant compliant
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 - EAR99 EAR99
Factory Lead Time 6 weeks 4 weeks 4 weeks - 6 weeks 1 week - 10 weeks 4 weeks
Other features LOW NOISE - LOW NOISE - LOW NOISE LOW NOISE - LOW NOISE -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A - 0.1 A 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 30 V 30 V - 45 V 30 V - 45 V 30 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE Single SINGLE SINGLE
Minimum DC current gain (hFE) 420 420 200 - 200 420 - 200 110
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 - R-XBCC-N3 R-PDSO-G3
JESD-609 code e3 e3 e3 - - e3 - e4 e3
Humidity sensitivity level 1 1 1 - 1 1 - 1 1
Number of components 1 1 1 - 1 1 - 1 1
Number of terminals 3 3 3 - 3 3 - 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - UNSPECIFIED PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN - NPN NPN - NPN NPN
surface mount YES YES YES - YES YES - YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) - - Tin (Sn) - Gold (Au) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING - GULL WING GULL WING - NO LEAD GULL WING
Terminal location DUAL DUAL DUAL - DUAL DUAL - BOTTOM DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER SWITCHING SWITCHING - AMPLIFIER AMPLIFIER - AMPLIFIER SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz - 250 MHz 250 MHz - 250 MHz 250 MHz
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