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BSC079N03S G

Description
MOSFET N-Ch 30V 14.6A TDSON-8
Categorysemiconductor    Discrete semiconductor   
File Size378KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC079N03S G Overview

MOSFET N-Ch 30V 14.6A TDSON-8

BSC079N03S G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current14.6 A
Rds On - Drain-Source Resistance7.9 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Pd - Power Dissipation2.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height1.27 mm
Length5.9 mm
Transistor Type1 N-Channel
Width5.15 mm
Fall Time3.4 ns
Moisture SensitiveYes
Rise Time4.2 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time5.1 ns
BSC079N03S G
OptiMOS™2
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC079N03S G
Package
PG-TDSON-8
Marking
79N03S
Product Summary
V
DS
R
DS(on),max
I
D
30
7.9
40
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.91
page 1
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=40 A,
R
GS
=25
I
D
=40 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
40
40
14.6
160
120
6
±20
60
2.8
-55 ... 150
55/150/56
2009-10-27
°C
mJ
kV/µs
V
W
Unit
A
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