TPDVxx25
25 A high voltage Triacs
Features
■
■
■
■
■
■
On-state current (I
T(RMS)
): 25 A
Max. blocking voltage (V
DRM
/V
RRM
): 1200 V
Gate current (I
GT
): 150 mA
Commutation @ 10 V/µs: up to 88 A/ms
Noise immunity: 2 kV/µs
Insulated package:
– 2,500 V rms (UL recognized: E81734).
G
A2
A1
Description
The TPDVxx25 series use high performance
alternistor technology.
Featuring very high commutation levels and high
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).
Table 1.
Device summary
Parameter
Blocking voltage V
DRM
/V
RRM
On-state current I
T(RMS)
Gate current I
GT
TPDV825RG
800 V
TPDV1025RG
1000 V
25 A
150 mA
TPDV1225RG
1200 V
A1
A2
G
TOP3 insulated
January 2012
Doc ID 18268 Rev 2
1/7
www.st.com
7
Characteristics
TPDVxx25
1
Table 2.
Symbol
I
T(RMS)
Characteristics
Absolute maximum ratings (limiting values)
Parameter
On-state rms current (180° conduction angle)
t
p
= 2.5 ms
I
TSM
I
2
t
dI/dt
Non repetitive surge peak on-state
current
I
2
t value for fusing
Critical rate of rise of on-state current
I
G
= 500 mA, dI
G
/dt = 1 A/µs
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 50 Hz
TPDV825
V
DRM
V
RRM
T
stg
T
j
Repetitive peak off-state voltage
TPDV1025
TPDV1225
Storage junction temperature range
Operating junction temperature range
Insulation rms voltage
T
j
= 125 °C
T
j
= 25 °C
T
j
= 25 °C
T
c
= 85 °C
Value
25
390
250
230
265
100
800
1000
1200
- 40 to + 150
- 40 to + 125
2500
°C
V
V
A
2
S
A/µs
A
Unit
A
V
INS(RMS)(1)
1. A1, A2, gate terminals to case for 1 minute
Table 3.
Symbol
I
GT
V
GT
V
GD
t
gt
I
H (1)
I
L
dV/dt
V
TM (1)
V
to(1)
R
d(1)
I
DRM
I
RRM
(dI/dt)c
(1)
Electrical Characteristics (T
j
= 25 °C, unless otherwise specified)
Test conditions
V
D
= 12 V DC, R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125 °C
Quadrant
MAX.
I - II - III
MAX.
I - II - III
I - II - III
MIN.
TYP.
TYP.
I - III
I
G
= 1.2 x I
GT
Linear slope up to: V
D
= 67% V
DRM
Gate open
I
TM
= 35 A
t
p
= 380 µs
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
MIN.
88
T
j
= 125 °C
TYP.
II
MIN.
MAX.
MAX.
MAX.
MAX.
8
20
A/ms
Value
150
1.5
0.2
2.5
50
100
Unit
mA
V
V
µs
mA
mA
V
D
= V
DRM
I
G
= 500 mA dI
G
/dt = 3 A/µs
I
T
= 500 mA
Gate open
200
2000
1.8
1.1
19
20
V/µs
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
(dV/dt)c = 200 V/µs
(dV/dt)c = 10 V/µs
1. For either polarity of electrode A
2
voltage with reference to electrode A
1
.
2/7
Doc ID 18268 Rev 2
TPDVxx25
Table 4.
Symbol
P
G(AV)
P
GM
I
GM
V
GM
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Peak positive gate voltage
t
p
= 20 µs
t
p
= 20 µs
t
p
= 20 µs
Characteristics
Gate characteristics (maximum values)
Parameter
Value
1
40
8
16
Unit
W
W
A
V
Table 5.
Symbol
R
th(j-a)
R
th(j-c)
DC
R
th(j-c)
AC
Thermal resistance
Parameter
Junction to ambient
Junction to case for DC
Junction to case for 360 °Conduction angle (F = 50 Hz)
Value
50
1.5
1.1
Unit
°C/W
°C/W
°C/W
Figure 1.
Max. rms power dissipation versus Figure 2.
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
P(W)
40
Max. rms power dissipation and
max. allowable temperatures
(T
amb
and T
case
) for various R
th
T
case
(°C)
R
th
= 1°C/W R
th
= 0.5°C/W R
th
= 0°C/W
P(W)
40
Rth case to ambient -
R
th
= 1.5°C/W
85
30
α
= 180°
α
= 120°
30
95
20
α
= 90°
α
= 60°
180°
20
105
10
α
= 30°
α
α
10
115
I
T(RMS)
(A)
0
0
5
10
15
20
25
T
amb
(°C)
0
0
20
40
60
80
100
120
140
125
Figure 3.
I
T(RMS)
(A)
30
On-state rms current versus case
temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
K=[Z
th(j-c)
/R
th(j-c)
]
1.00
α
= 180°
Z
th(j-c)
25
20
0.10
15
Z
th(j-a)
10
0.01
5
T
case
(°C)
0
0
25
50
75
100
125
t
p
(s)
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Doc ID 18268 Rev 2
3/7
Characteristics
TPDVxx25
Figure 5.
Relative variation of gate trigger
Figure 6.
current and holding current versus
junction temperature
I
TSM
(A)
200
Non repetitive surge peak on-state
current versus number of cycles
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2
t = 20 ms
150
1.5
I
GT
One cycle
T
j
initial=25°C
100
1
I
H
& I
L
0.5
50
T
j
(°C)
0
-40 -30 -20 -10
0
10 20
30
40 50
60 70 80
90 100 110 120 130
Number of cycles
0
1
10
100
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and
corresponding values of I
2
t
2
2
On-state characteristics (maximum
values)
I
TSM
(A), I t (A s)
1000
T
j
initial = 25°C
I
TM
(A)
1000
I
TSM
100
T
j
=max
I
2
t
T
j
=25°C
10
T
j
max.:
V
t0
=1.1V
R
d
=19m
Ω
t
p
(ms)
100
1
2
5
10
1
1
2
3
V
TM
(V)
4
5
6
Figure 9.
Safe turn-off operating area
(dV/dt)c(V/µs)
1000
T
j
initial = 25°C
100
10
(dI/dt)c(A/ms)
1
1
10
100
4/7
Doc ID 18268 Rev 2
TPDVxx25
Package information
2
Package information
●
●
●
Epoxy meets UL94,V0
Cooling method: C (by conduction)
Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 6.
TOP3 insulated dimensions
Dimensions
Ref.
Millimeters
Min.
H
R
B
A
Inches
Min.
0.173
0.057
0.565
0.020
0.106
0.622
0.815
0.594
0.213
0.134
0.161
0.047
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
Max.
4.6
1.55
15.60
0.7
2.9
16.5
21.1
15.5
5.65
3.65
4.17
1.40
A
ØL
4.4
1.45
14.35
0.5
2.7
15.8
20.4
15.1
5.4
3.4
4.08
1.20
B
C
K
D
F
G
E
F
G
P
C
H
J
J
J
D
E
K
ØL
P
R
4.60 typ.
0.181 typ.
Doc ID 18268 Rev 2
5/7
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