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BSL606SNH6327XTSA1

Description
MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A
Categorysemiconductor    Discrete semiconductor   
File Size447KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A

BSL606SNH6327XTSA1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current4.5 A
Rds On - Drain-Source Resistance49 mOhms
Vgs th - Gate-Source Threshold Voltage1.3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge5.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
Height1.1 mm
Length3 mm
Transistor Type1 N-Channel
Width1.5 mm
Forward Transconductance - Min7.1 S
Fall Time3.1 ns
Rise Time3 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time6.8 ns
BSL606SN
OptiMOS
-3 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100%lead-free; Halogen-free; RoHS compliant
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
60
60
95
4.5
A
V
mW
PG-TSOP-6
6
5
4
1
2
3
Type
BSL606SN
Package
PG-TSOP-6
Tape and Reel Info
H6327: 3000 pcs/reel
Marking
sPW
Halogen-free
Yes
Package
Non-dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=4.5 A,
R
GS
=25
W
Value
4.5
3.6
18.1
14
mJ
Unit
A
Reverse diode dv /dt
dv /dt
I
D
=4.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
2.0
-55 ... 150
class 0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.2
page 1
2013-04-05
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