BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
■
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
■
■
■
BS170
MMBF170
D
S
D
G
TO-92
S
G
SOT-23
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
T
J
, T
STG
T
L
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Drain-Gate Voltage (R
GS
≤
1MΩ)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
BS170
60
60
± 20
500
1200
MMBF170
Units
V
V
V
500
800
- 55 to 150
300
mA
°C
°C
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Parameter
Maximum Power Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
BS170
830
6.6
150
MMBF170
300
2.4
417
Units
mW
mW/°C
°C/W
© 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
1
www.fairchildsemi.com
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSSF
V
GS(th)
g
FS
T
A
=25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate Threshold Voltage
Forward Transconductance
Conditions
V
GS
= 0V, I
D
= 100μA
V
DS
= 25V, V
GS
= 0V
V
GS
= 15V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
DS
= 10V, I
D
= 200mA
V
DS
≥
2 V
DS(on)
,
I
D
= 200mA
Type
All
All
All
All
All
BS170
MMBF170
Min.
60
Typ.
Max. Units
V
0.5
10
μA
nA
V
Ω
mS
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Notes 1)
0.8
2.1
1.2
320
320
3
5
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10V, I
D
= 200mA
Dynamic Characteristics
C
iss
C
oss
C
rss
t
on
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DD
= 25V, I
D
= 200mA,
V
GS
= 10V, R
GEN
= 25Ω
V
DD
= 25V, I
D
= 500mA,
V
GS
= 10V, R
GEN
= 50Ω
t
off
Turn-Off Time
V
DD
= 25V, I
D
= 200mA,
V
GS
= 10V, R
GEN
= 25Ω
V
DD
= 25V, I
D
= 500mA,
V
GS
= 10V, R
GEN
= 50Ω
Note:
1. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%.
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
All
All
All
BS170
MMBF170
BS170
MMBF170
24
17
7
40
30
10
10
10
10
10
ns
pF
pF
pF
ns
Switching Characteristics
(Notes 1)
Ordering Information
Part Number
BS170
BS170_D26Z
BS170_D27Z
BS170_D74Z
BS170_D75Z
MMBF170
Package
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-23
Package Type
BULK
Tape and Reel
Tape and Reel
AMMO
AMMO
Tape and Reel
Lead Frame
STRAIGHT
FORMING
FORMING
FORMING
FORMING
Pin array
DGS
DGS
DGS
DGS
DGS
© 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
2
www.fairchildsemi.com
Embedded System
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