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BSP170P H6327

Description
MOSFET P-Ch -60V -1.9A SOT-223-3
Categorysemiconductor    Discrete semiconductor   
File Size570KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP170P H6327 Overview

MOSFET P-Ch -60V -1.9A SOT-223-3

BSP170P H6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 60 V
Id - Continuous Drain Current- 1.9 A
Rds On - Drain-Source Resistance300 mOhms
Vgs th - Gate-Source Threshold Voltage- 2.1 V
Vgs - Gate-Source Voltage- 10 V
Qg - Gate Charge- 10 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation1.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.6 mm
Length6.5 mm
Transistor Type1 P-Channel
Width3.5 mm
Forward Transconductance - Min1.3 S
Fall Time60 ns
Rise Time28 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time92 ns
Typical Turn-On Delay Time14 ns
Unit Weight0.003951 oz
BSP170P
SIPMOS
Small-Signal-Transistor
®
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
A
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead
plating;
RoHS compliant
• Qualified according to AEC Q101
PG-SOT223
• Halogen­free according to IEC61249­2­21
Type
BSP170P
Package
PG-SOT223
Tape and reel information
H6327:
1000pcs/reel
Marking
Lead free
Packing
Non Dry
BSP170P Yes
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.9 A,
R
GS
=25
-1.9
-1.5
-7.6
70
0.18
I
D
=1.9 A,
V
DS
=48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
mJ
A
Unit
Avalanche energy, periodic limited by
E
AR
T
jmax
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
dv /dt
V
GS
P
tot
T
j
,
T
stg
JESD22-C101 (HBM)
T
A
=25 °C
-6
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.53
page 1
2012-11-26

BSP170P H6327 Related Products

BSP170P H6327 BSP170PH6327XTSA1 BSP170P L6327
Description MOSFET P-Ch -60V -1.9A SOT-223-3 MOSFET P-Ch -60V -1.9A SOT-223-3 MOSFET P-Ch -60V 1.9A SOT-223-3
Configuration Single SINGLE WITH BUILT-IN DIODE Single Dual Drain
Product Attribute Attribute Value - Attribute Value
Manufacturer Infineon - Infineon
Product Category MOSFET - MOSFET
RoHS Details - Details
Technology Si - GaN
Mounting Style SMD/SMT - SMD/SMT
Package / Case SOT-223-4 - SOT-223-4
Number of Channels 1 Channel - 1 Channel
Transistor Polarity P-Channel - P-Channel
Vds - Drain-Source Breakdown Voltage - 60 V - - 60 V
Id - Continuous Drain Current - 1.9 A - - 1.9 A
Rds On - Drain-Source Resistance 300 mOhms - 300 mOhms
Vgs - Gate-Source Voltage - 10 V - 20 V
Minimum Operating Temperature - 55 C - - 55 C
Maximum Operating Temperature + 150 C - + 150 C
Pd - Power Dissipation 1.8 W - 1.8 W
Channel Mode Enhancement - Enhancement
Packaging Reel - Reel
Height 1.6 mm - 1.6 mm
Length 6.5 mm - 6.5 mm
Transistor Type 1 P-Channel - 1 P-Channel
Width 3.5 mm - 3.5 mm
Fall Time 60 ns - 28 ns
Rise Time 28 ns - 28 ns
Factory Pack Quantity 1000 - 1000
Typical Turn-Off Delay Time 92 ns - 92 ns
Typical Turn-On Delay Time 14 ns - 14 ns
Unit Weight 0.003951 oz - 0.003951 oz
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