BLF7G21L-160P;
BLF7G21LS-160P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
[1]
[2]
f
(MHz)
1930 to 1990
1930 to 1990
I
Dq
(mA)
1080
1080
V
DS
(V)
28
28
P
L(AV)
(W)
45
50
G
p
(dB)
18
18.0
D
(%)
34
36
ACPR
(dBc)
30
[1]
34
[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2050 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2050 MHz frequency range
BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G21L-160P (SOT1121A)
1
2
1
3
5
3
4
5
4
2
sym117
BLF7G21LS-160P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
5
4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G21L-160P
BLF7G21LS-160P
-
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
32.5
+150
200
Unit
V
V
A
C
C
BLF7G21L-160P_7G21LS-160P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 15
BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
Unit
0.41 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 90 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 4.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.15 A
Min Typ
65
1.5
-
14
-
-
-
-
1.9
-
-
-
7
0.15
Max Unit
-
2.3
2
-
200
-
-
V
V
A
A
nA
S
7. Test information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1937.5 MHz; f
3
= 1982.5 MHz; f
4
= 1987.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1080 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
-
Min Typ
17.0 18.0
-
31
15
34
30
-
Max
-
8
-
25
-
Unit
dB
dB
%
dBc
dBc
ACPR
10M
adjacent channel power ratio (10 MHz)
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1987.5 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 1080 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
PAR
O
output peak-to-average ratio
Conditions
P
L(AV)
= 80 W;
at 0.01 % probability on CCDF
Min
4.0
Typ Max Unit
4.5
-
dB
BLF7G21L-160P_7G21LS-160P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 15
BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF7G21L-160P and BLF7G21LS-160P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions:
V
DS
= 28 V; I
Dq
= 1080 mA; P
L
= 160 W (CW), f = 1805 MHz,
V
DS
= 28 V; I
Dq
= 350 mA; P
L
= 31.6 W (IS-95); P
L
= 90 W (pulsed CW,
= 10 %,
t
p
= 100
s,
per section), f = 1495 MHz.
7.2 CW
22
G
p
(dB)
18
(1)
(2)
(3)
001aan460
60
η
D
(%)
40
14
20
10
38
42
46
50
P
L
(dBm)
54
0
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
Fig 1.
Power gain and drain efficiency as function of load power; typical values
BLF7G21L-160P_7G21LS-160P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 15
BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS transistor
7.3 1-Carrier W-CDMA
22
G
p
(dB)
18
(1)
(2)
(3)
001aan461
60
η
D
(%)
40
- 10
ACPR
5M
(dBc)
- 30
001aan462
- 10
ACPR
10M
(dBc)
- 30
14
20
- 50
(1)
(2)
(3)
- 50
10
28
36
44
P
L
(dBm)
52
0
- 70
28
36
44
P
L
(dBm)
52
- 70
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
Fig 2.
Power gain and drain efficiency as function of
load power; typical values
Fig 3.
Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as a
function of load power; typical values
8
PAR
(dB)
6
001aan463
(1)
(2)
(3)
4
2
0
28
36
44
P
L
(dBm)
52
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
Fig 4.
Peak-to-average ratio as a function of load power; typical values
BLF7G21L-160P_7G21LS-160P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 15
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