BLF7G21LS-160P118 datasheet, PDF

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BLF7G21LS-160P118: DescriptionRF MOSFET Transistors Power LDMOS transistor; Categorysemiconductor Discrete semiconductor; File Size1MB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF7G21LS-160P118 Overview

RF MOSFET Transistors Power LDMOS transistor

BLF7G21LS-160P118 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	NXP
Product Category	RF MOSFET Transistors
RoHS	Details
Transistor Polarity	N-Channel
Id - Continuous Drain Current	32.5 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	150 mOhms
Technology	Si
Gain	18 dB
Output Power	50 W
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SOT-1121B-5
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Configuration	Dual
Operating Frequency	1.8 GHz to 2.05 GHz
Type	RF Power MOSFET
NumOfPackaging	3
Factory Pack Quantity	100
Vgs - Gate-Source Voltage	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V

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BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

1-carrier W-CDMA

[1]

[2]

(MHz)

1930 to 1990

(mA)

1080

(V)

L(AV)

(W)

(dB)

18.0



(%)

ACPR

(dBc)

30

[1]

34

[2]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low thermal resistance providing excellent thermal stability

Designed for broadband operation (1800 MHz to 2050 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2050 MHz frequency range

BLF7G21LS-160P118 Related Products

	BLF7G21LS-160P118	BLF7G21L-160P118	BLF7G21LS-160P,112
Description	RF MOSFET Transistors Power LDMOS transistor	RF MOSFET Transistors Power LDMOS transistor	RF MOSFET Transistors Power LDMOS transistor
Product Attribute	Attribute Value	Attribute Value	-
Manufacturer	NXP	NXP	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
RoHS	Details	Details	-
Transistor Polarity	N-Channel	N-Channel	-
Id - Continuous Drain Current	32.5 A	32.5 A	-
Vds - Drain-Source Breakdown Voltage	65 V	65 V	-
Rds On - Drain-Source Resistance	150 mOhms	150 mOhms	-
Technology	Si	Si	-
Gain	18 dB	18 dB	-
Output Power	50 W	50 W	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-1121B-5	SOT-1121A-5	-
Packaging	Reel	Reel	-
Configuration	Dual	Dual	-
Operating Frequency	1.8 GHz to 2.05 GHz	1.8 GHz to 2.05 GHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Factory Pack Quantity	100	100	-
Vgs - Gate-Source Voltage	13 V	13 V	-
Vgs th - Gate-Source Threshold Voltage	1.9 V	1.9 V	-

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