Diode
RapidSwitchingEmitterControlledDiode
IDV30E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
IDV30E65D2
EmitterControlledDiode
RapidSwitchingEmitterControlledDiode
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
•BoostdiodeinCCMPFC
A
C
C
A
KeyPerformanceandPackageParameters
Type
IDV30E65D2
V
rrm
650V
I
f
30A
V
f
,T
vj
=25°C
1.6V
T
vjmax
175°C
Marking
E30ED2
Package
PG-TO220-2-22 FP
2
Rev.2.1,2014-09-18
IDV30E65D2
EmitterControlledDiode
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.1,2014-09-18
IDV30E65D2
EmitterControlledDiode
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Repetitivepeakreversevoltage,T
vj
≥25°C
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Diode surge non repetitive forward current
T
C
=25°C,t
p
=8.3ms,sinehalfwave
PowerdissipationT
C
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
Diode thermal resistance,
1)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
RRM
I
F
I
Fpuls
I
FSM
P
tot
T
vj
T
stg
Value
650
30.0
17.5
90.0
180.0
47.0
-40...+175
-55...+150
260
Unit
V
A
A
A
W
°C
°C
°C
Nm
M
0.6
Max.Value
Unit
R
th(j-c)
R
th(j-a)
3.20
65
K/W
K/W
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Diode forward voltage
V
F
I
F
=30.0A
T
vj
=25°C
T
vj
=175°C
V
R
=650V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
1.60
1.65
4.0
800.0
2.20
-
40.0
-
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Reverse leakage current
I
R
µA
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
-
7.0
-
nH
Symbol Conditions
Value
min.
typ.
max.
Unit
1)
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.2.1,2014-09-18
IDV30E65D2
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
T
vj
=25°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
-
-
-
42
0.34
14.7
-2100
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
70
0.25
5.7
-700
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
T
vj
=125°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
-
-
-
56
0.61
18.0
-2200
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
73
0.38
7.1
-900
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
5
Rev.2.1,2014-09-18
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